JPS57117256A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57117256A
JPS57117256A JP320481A JP320481A JPS57117256A JP S57117256 A JPS57117256 A JP S57117256A JP 320481 A JP320481 A JP 320481A JP 320481 A JP320481 A JP 320481A JP S57117256 A JPS57117256 A JP S57117256A
Authority
JP
Japan
Prior art keywords
wiring
metal silicide
single crystal
completely separated
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP320481A
Other languages
Japanese (ja)
Inventor
Susumu Muramoto
Kazuo Imai
Takao Amasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP320481A priority Critical patent/JPS57117256A/en
Publication of JPS57117256A publication Critical patent/JPS57117256A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To make a high density wiring with low resistance by composing a part of LSI wiring with metal silicide layer completely separated from an insulator. CONSTITUTION:A single crystal silicon thin film region 120 comprises a source diffusion layer 121 of an MOS transistor, a drain diffusion layer 123 and a substrate 122. The single crystal silicon thin film region 120 and the metal silicide film 131-134 that make wiring material are completely separated by a porous silicon oxide film 109. The metal silicide layer 131-134 are solely used for wiring.
JP320481A 1981-01-14 1981-01-14 Semiconductor device Pending JPS57117256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP320481A JPS57117256A (en) 1981-01-14 1981-01-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP320481A JPS57117256A (en) 1981-01-14 1981-01-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57117256A true JPS57117256A (en) 1982-07-21

Family

ID=11550901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP320481A Pending JPS57117256A (en) 1981-01-14 1981-01-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57117256A (en)

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