JPS556831A - Complementary mis integrated circuit device - Google Patents

Complementary mis integrated circuit device

Info

Publication number
JPS556831A
JPS556831A JP7893178A JP7893178A JPS556831A JP S556831 A JPS556831 A JP S556831A JP 7893178 A JP7893178 A JP 7893178A JP 7893178 A JP7893178 A JP 7893178A JP S556831 A JPS556831 A JP S556831A
Authority
JP
Japan
Prior art keywords
impurity introduction
region
integrated circuit
circuit device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7893178A
Other languages
Japanese (ja)
Other versions
JPS6237814B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7893178A priority Critical patent/JPS556831A/en
Priority to US06/015,427 priority patent/US4353085A/en
Publication of JPS556831A publication Critical patent/JPS556831A/en
Publication of JPS6237814B2 publication Critical patent/JPS6237814B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the back gate effect by means of a reverse conducting impurity introduction region formed on the surface of the substrate covering a plurality of openings of the insulating film.
CONSTITUTION: An impurity introduction region 22 is formed on the surface of a ntype silicone semiconductor substrate 21 covering a plurality of transistor units. Subsequently, a technique for producing a MIS integrated circuit device having a normal embedded insulated layer is applied to complete it. With such an arrangement, it is possible to uniformize the potential in the channel of respective MIS transistor units. With the junction, the impurity introduction region is separated from the substrate. Due to the large region and the junction area, any excessive carrier quickly leaks or diffuses in the region even if generated in a certain channel. Therefore, no kink is caused.
COPYRIGHT: (C)1980,JPO&Japio
JP7893178A 1978-02-27 1978-06-29 Complementary mis integrated circuit device Granted JPS556831A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7893178A JPS556831A (en) 1978-06-29 1978-06-29 Complementary mis integrated circuit device
US06/015,427 US4353085A (en) 1978-02-27 1979-02-26 Integrated semiconductor device having insulated gate field effect transistors with a buried insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7893178A JPS556831A (en) 1978-06-29 1978-06-29 Complementary mis integrated circuit device

Publications (2)

Publication Number Publication Date
JPS556831A true JPS556831A (en) 1980-01-18
JPS6237814B2 JPS6237814B2 (en) 1987-08-14

Family

ID=13675608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7893178A Granted JPS556831A (en) 1978-02-27 1978-06-29 Complementary mis integrated circuit device

Country Status (1)

Country Link
JP (1) JPS556831A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857745A (en) * 1981-10-01 1983-04-06 Nec Corp Preparation of complementary semiconductor device
JPS5857746A (en) * 1981-10-01 1983-04-06 Nec Corp Complementary semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857745A (en) * 1981-10-01 1983-04-06 Nec Corp Preparation of complementary semiconductor device
JPS5857746A (en) * 1981-10-01 1983-04-06 Nec Corp Complementary semiconductor device

Also Published As

Publication number Publication date
JPS6237814B2 (en) 1987-08-14

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