JPS52147982A - Manufacture of mos-type semiconductor ic unit - Google Patents
Manufacture of mos-type semiconductor ic unitInfo
- Publication number
- JPS52147982A JPS52147982A JP6497376A JP6497376A JPS52147982A JP S52147982 A JPS52147982 A JP S52147982A JP 6497376 A JP6497376 A JP 6497376A JP 6497376 A JP6497376 A JP 6497376A JP S52147982 A JPS52147982 A JP S52147982A
- Authority
- JP
- Japan
- Prior art keywords
- mos
- manufacture
- unit
- type semiconductor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To have a formation of an eaves-like mask at the verge of the thin film through plasma etching by varying the etching velocity against the insulation thin film formed on the semiconductor substrate. As a result, the source and drain diffusion layers are prevented from touching the channel stopper diffusion layer, thus increasing the junction anti-voltage performance.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6497376A JPS52147982A (en) | 1976-06-02 | 1976-06-02 | Manufacture of mos-type semiconductor ic unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6497376A JPS52147982A (en) | 1976-06-02 | 1976-06-02 | Manufacture of mos-type semiconductor ic unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52147982A true JPS52147982A (en) | 1977-12-08 |
Family
ID=13273490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6497376A Pending JPS52147982A (en) | 1976-06-02 | 1976-06-02 | Manufacture of mos-type semiconductor ic unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52147982A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08203882A (en) * | 1995-01-25 | 1996-08-09 | Nec Corp | Fabrication of semiconductor device |
-
1976
- 1976-06-02 JP JP6497376A patent/JPS52147982A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08203882A (en) * | 1995-01-25 | 1996-08-09 | Nec Corp | Fabrication of semiconductor device |
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