JPS52147982A - Manufacture of mos-type semiconductor ic unit - Google Patents

Manufacture of mos-type semiconductor ic unit

Info

Publication number
JPS52147982A
JPS52147982A JP6497376A JP6497376A JPS52147982A JP S52147982 A JPS52147982 A JP S52147982A JP 6497376 A JP6497376 A JP 6497376A JP 6497376 A JP6497376 A JP 6497376A JP S52147982 A JPS52147982 A JP S52147982A
Authority
JP
Japan
Prior art keywords
mos
manufacture
unit
type semiconductor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6497376A
Other languages
Japanese (ja)
Inventor
Sokichi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6497376A priority Critical patent/JPS52147982A/en
Publication of JPS52147982A publication Critical patent/JPS52147982A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To have a formation of an eaves-like mask at the verge of the thin film through plasma etching by varying the etching velocity against the insulation thin film formed on the semiconductor substrate. As a result, the source and drain diffusion layers are prevented from touching the channel stopper diffusion layer, thus increasing the junction anti-voltage performance.
COPYRIGHT: (C)1977,JPO&Japio
JP6497376A 1976-06-02 1976-06-02 Manufacture of mos-type semiconductor ic unit Pending JPS52147982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6497376A JPS52147982A (en) 1976-06-02 1976-06-02 Manufacture of mos-type semiconductor ic unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6497376A JPS52147982A (en) 1976-06-02 1976-06-02 Manufacture of mos-type semiconductor ic unit

Publications (1)

Publication Number Publication Date
JPS52147982A true JPS52147982A (en) 1977-12-08

Family

ID=13273490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6497376A Pending JPS52147982A (en) 1976-06-02 1976-06-02 Manufacture of mos-type semiconductor ic unit

Country Status (1)

Country Link
JP (1) JPS52147982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203882A (en) * 1995-01-25 1996-08-09 Nec Corp Fabrication of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203882A (en) * 1995-01-25 1996-08-09 Nec Corp Fabrication of semiconductor device

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