JPS5578563A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5578563A JPS5578563A JP15224278A JP15224278A JPS5578563A JP S5578563 A JPS5578563 A JP S5578563A JP 15224278 A JP15224278 A JP 15224278A JP 15224278 A JP15224278 A JP 15224278A JP S5578563 A JPS5578563 A JP S5578563A
- Authority
- JP
- Japan
- Prior art keywords
- region
- bonding pad
- insulating film
- wiring layer
- resistive region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To prevent insulation breakdown of an insulating film by forming a resistive region having a large area in a semiconductive region and forming a bonding pad and a wiring layer in a portion at a location on the resistive region of the insulating film.
CONSTITUTION: The area of a resistive region 13 provided on a semiconductor region 11a is made larger than the area of the conventional region. A bonding pad 16 and a wiring layer 17 are formed in a portion at a location on the resistive region 13 of an insulating film 14. Therefore, the bonding pad 16 and the wiring layer 17 do not cover semiconductor regions 11a and 11b, a separating region 12, and the like. In this constitution, since the potentials of the bonding pad 16, the wiring layer 17, and the resistive region 13 directly beneath thereof become the same, the insulation breadkown of the insulating film 14 due to surge voltages, which are applied to the bonding pad 16, are completely prevented even though the thickness of the intervening insulation film 14 is somewhat thin.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15224278A JPS5578563A (en) | 1978-12-08 | 1978-12-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15224278A JPS5578563A (en) | 1978-12-08 | 1978-12-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5578563A true JPS5578563A (en) | 1980-06-13 |
Family
ID=15536186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15224278A Pending JPS5578563A (en) | 1978-12-08 | 1978-12-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5578563A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318708A (en) * | 1983-03-21 | 1994-11-15 | Internatl Rectifier Corp | High output mosfet |
-
1978
- 1978-12-08 JP JP15224278A patent/JPS5578563A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318708A (en) * | 1983-03-21 | 1994-11-15 | Internatl Rectifier Corp | High output mosfet |
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