JPS5578563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5578563A
JPS5578563A JP15224278A JP15224278A JPS5578563A JP S5578563 A JPS5578563 A JP S5578563A JP 15224278 A JP15224278 A JP 15224278A JP 15224278 A JP15224278 A JP 15224278A JP S5578563 A JPS5578563 A JP S5578563A
Authority
JP
Japan
Prior art keywords
region
bonding pad
insulating film
wiring layer
resistive region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15224278A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15224278A priority Critical patent/JPS5578563A/en
Publication of JPS5578563A publication Critical patent/JPS5578563A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent insulation breakdown of an insulating film by forming a resistive region having a large area in a semiconductive region and forming a bonding pad and a wiring layer in a portion at a location on the resistive region of the insulating film.
CONSTITUTION: The area of a resistive region 13 provided on a semiconductor region 11a is made larger than the area of the conventional region. A bonding pad 16 and a wiring layer 17 are formed in a portion at a location on the resistive region 13 of an insulating film 14. Therefore, the bonding pad 16 and the wiring layer 17 do not cover semiconductor regions 11a and 11b, a separating region 12, and the like. In this constitution, since the potentials of the bonding pad 16, the wiring layer 17, and the resistive region 13 directly beneath thereof become the same, the insulation breadkown of the insulating film 14 due to surge voltages, which are applied to the bonding pad 16, are completely prevented even though the thickness of the intervening insulation film 14 is somewhat thin.
COPYRIGHT: (C)1980,JPO&Japio
JP15224278A 1978-12-08 1978-12-08 Semiconductor device Pending JPS5578563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15224278A JPS5578563A (en) 1978-12-08 1978-12-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15224278A JPS5578563A (en) 1978-12-08 1978-12-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5578563A true JPS5578563A (en) 1980-06-13

Family

ID=15536186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15224278A Pending JPS5578563A (en) 1978-12-08 1978-12-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578563A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318708A (en) * 1983-03-21 1994-11-15 Internatl Rectifier Corp High output mosfet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318708A (en) * 1983-03-21 1994-11-15 Internatl Rectifier Corp High output mosfet

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