JPS57109372A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57109372A
JPS57109372A JP18881080A JP18881080A JPS57109372A JP S57109372 A JPS57109372 A JP S57109372A JP 18881080 A JP18881080 A JP 18881080A JP 18881080 A JP18881080 A JP 18881080A JP S57109372 A JPS57109372 A JP S57109372A
Authority
JP
Japan
Prior art keywords
thylistor
base layer
layer
conductivity type
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18881080A
Other languages
Japanese (ja)
Inventor
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18881080A priority Critical patent/JPS57109372A/en
Priority to DE19813151138 priority patent/DE3151138A1/en
Publication of JPS57109372A publication Critical patent/JPS57109372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Abstract

PURPOSE: To protect a thylistor from excessive voltage by forming the width of the second base layer of an auxiliary thylistor larger than the width of the second base layer of a main thylistor thereby producing a turn-on like phenomenon due to the application of a normal gate voltage when applying the excessive voltage.
CONSTITUTION: The first conductivity type first emitter layer 5 and an auxiliary emitter layer 6, the second conductivity type first base layer 2, the first conductivity type second layer 1, the first conductivity type low resistance layer with its resistance lower than that of the second base layer, and the second conductivity type second emitter layer 4 are formed one after another consecutively on one surface side to the other surface side of a semiconductor substrate. Gates 11, 12 are formed by exposing the first base layer 2 at one of the main surfaces. The width W1 of the second base layer 2 of the auxiliary thylistor B is made narrower than the width W2 of the second base layer 2 of the main thylistor A. The auxiliary thylistor B is locally turned on by the excess voltage and this current flows into the periphery of the main thylistor A, instantly turning on the main thylistor A thus protecting it from the excess voltage.
COPYRIGHT: (C)1982,JPO&Japio
JP18881080A 1980-12-25 1980-12-25 Semiconductor device Pending JPS57109372A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP18881080A JPS57109372A (en) 1980-12-25 1980-12-25 Semiconductor device
DE19813151138 DE3151138A1 (en) 1980-12-25 1981-12-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18881080A JPS57109372A (en) 1980-12-25 1980-12-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57109372A true JPS57109372A (en) 1982-07-07

Family

ID=16230199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18881080A Pending JPS57109372A (en) 1980-12-25 1980-12-25 Semiconductor device

Country Status (2)

Country Link
JP (1) JPS57109372A (en)
DE (1) DE3151138A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5510274A (en) * 1987-08-19 1996-04-23 Mitsubishi Denki Kabushiki Kaisha Method of controlling a carrier lifetime in a semiconductor switching device
DE3917100A1 (en) * 1989-05-26 1990-11-29 Eupec Gmbh & Co Kg THYRISTOR
DE59209348D1 (en) * 1991-03-27 1998-07-02 Siemens Ag Method of manufacturing a thyristor with adjustable breakover voltage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953782A (en) * 1972-08-04 1974-05-24

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE223864C (en) *
FR2347781A1 (en) * 1976-04-08 1977-11-04 Alsthom Cgee REVERSE CONDUCTION THYRISTOR

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953782A (en) * 1972-08-04 1974-05-24

Also Published As

Publication number Publication date
DE3151138A1 (en) 1982-07-08

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