JPS5295984A - Vertical junction type field effect transistor - Google Patents

Vertical junction type field effect transistor

Info

Publication number
JPS5295984A
JPS5295984A JP1261776A JP1261776A JPS5295984A JP S5295984 A JPS5295984 A JP S5295984A JP 1261776 A JP1261776 A JP 1261776A JP 1261776 A JP1261776 A JP 1261776A JP S5295984 A JPS5295984 A JP S5295984A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
vertical junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1261776A
Other languages
Japanese (ja)
Other versions
JPS5858815B2 (en
Inventor
Kiyoshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1261776A priority Critical patent/JPS5858815B2/en
Publication of JPS5295984A publication Critical patent/JPS5295984A/en
Publication of JPS5858815B2 publication Critical patent/JPS5858815B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a high withstand voltage FET by covering the reticulated P type burried layer on the N type substrate selectivity with an insulator and etching the poly Si layer formed by integrating the epi layer.
COPYRIGHT: (C)1977,JPO&Japio
JP1261776A 1976-02-06 1976-02-06 Ion implantation method Expired JPS5858815B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1261776A JPS5858815B2 (en) 1976-02-06 1976-02-06 Ion implantation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1261776A JPS5858815B2 (en) 1976-02-06 1976-02-06 Ion implantation method

Publications (2)

Publication Number Publication Date
JPS5295984A true JPS5295984A (en) 1977-08-12
JPS5858815B2 JPS5858815B2 (en) 1983-12-27

Family

ID=11810327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1261776A Expired JPS5858815B2 (en) 1976-02-06 1976-02-06 Ion implantation method

Country Status (1)

Country Link
JP (1) JPS5858815B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226866A (en) * 1985-07-26 1987-02-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Double injection fet
WO2000022679A1 (en) * 1998-10-09 2000-04-20 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
JP2000200791A (en) * 1999-01-05 2000-07-18 Kansai Electric Power Co Inc:The Voltage driven bipolar semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226866A (en) * 1985-07-26 1987-02-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド Double injection fet
WO2000022679A1 (en) * 1998-10-09 2000-04-20 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
US6600192B1 (en) 1998-10-09 2003-07-29 The Kansai Electric Power Co., Inc. Vertical field-effect semiconductor device with buried gate region
EP1128443A4 (en) * 1998-10-09 2007-08-01 Kansai Electric Power Co FIELD ELFECT SEMICONDUCTOR CONSTRUCTION ELEMENT
JP2000200791A (en) * 1999-01-05 2000-07-18 Kansai Electric Power Co Inc:The Voltage driven bipolar semiconductor device

Also Published As

Publication number Publication date
JPS5858815B2 (en) 1983-12-27

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