JPS57164571A - Semiconductro integrated circuit device - Google Patents

Semiconductro integrated circuit device

Info

Publication number
JPS57164571A
JPS57164571A JP5088281A JP5088281A JPS57164571A JP S57164571 A JPS57164571 A JP S57164571A JP 5088281 A JP5088281 A JP 5088281A JP 5088281 A JP5088281 A JP 5088281A JP S57164571 A JPS57164571 A JP S57164571A
Authority
JP
Japan
Prior art keywords
pad
integrated circuit
circuit device
protecting circuit
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5088281A
Other languages
Japanese (ja)
Inventor
Kazuhiro Sakashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5088281A priority Critical patent/JPS57164571A/en
Publication of JPS57164571A publication Critical patent/JPS57164571A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an input protecting circuit strong for the fusing by overcurrent and the breakdown, by positioning a protecting diode immediately under a pad part. CONSTITUTION:To transmit electric signal from outside into the active element in a semiconductor integrated circuit device formed on the first conductive semiconductor substrate 10, the pad 100 constituted of a conductive material 101 is provided on an insulating film 11 of the semiconductor substrate 10. Then, a contact hole 201 is formed on the insulating film 11 immediately under the pad 100 with the second conductive semiconductor region 202 provided thereunder to form a diode for the constitution of an input protecting circuit. Thus, the wiring layer of the conductive material 101 from the pad to protecting circuit becomes shortest to sufficiently enlarge the contact hole 201.
JP5088281A 1981-04-02 1981-04-02 Semiconductro integrated circuit device Pending JPS57164571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5088281A JPS57164571A (en) 1981-04-02 1981-04-02 Semiconductro integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5088281A JPS57164571A (en) 1981-04-02 1981-04-02 Semiconductro integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57164571A true JPS57164571A (en) 1982-10-09

Family

ID=12871094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5088281A Pending JPS57164571A (en) 1981-04-02 1981-04-02 Semiconductro integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57164571A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821089A (en) * 1985-10-15 1989-04-11 American Telephone And Telegraph Company, At&T Laboratories Protection of IGFET integrated circuits from electrostatic discharge
EP0337482A2 (en) * 1988-04-14 1989-10-18 Kabushiki Kaisha Toshiba Semiconducteur protection device
US4876584A (en) * 1986-09-10 1989-10-24 British Aerospace Plc Electrostatic discharge protection circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821089A (en) * 1985-10-15 1989-04-11 American Telephone And Telegraph Company, At&T Laboratories Protection of IGFET integrated circuits from electrostatic discharge
US4876584A (en) * 1986-09-10 1989-10-24 British Aerospace Plc Electrostatic discharge protection circuit
EP0337482A2 (en) * 1988-04-14 1989-10-18 Kabushiki Kaisha Toshiba Semiconducteur protection device
US5148249A (en) * 1988-04-14 1992-09-15 Kabushiki Kaisha Toshiba Semiconductor protection device

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