JPS57211782A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57211782A
JPS57211782A JP9667981A JP9667981A JPS57211782A JP S57211782 A JPS57211782 A JP S57211782A JP 9667981 A JP9667981 A JP 9667981A JP 9667981 A JP9667981 A JP 9667981A JP S57211782 A JPS57211782 A JP S57211782A
Authority
JP
Japan
Prior art keywords
circuit element
compound semiconductor
semiconductor substrate
silicon layer
poly silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9667981A
Other languages
Japanese (ja)
Inventor
Masatomo Furuumi
Kazumichi Sakamoto
Shuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9667981A priority Critical patent/JPS57211782A/en
Publication of JPS57211782A publication Critical patent/JPS57211782A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Abstract

PURPOSE:To permit mass production by connecting a circuit element directly formed on a compound semiconductor substrate and the desired electrode section of the circuit element of a poly silicon layer by a wiring layer crawling on an insulating film covering the desired sections of both the circuit elements. CONSTITUTION:A semiconductor device is composed of a compound semiconductor substrate 9, a circuit element 10 formed on the main surface of the compound semiconductor substrate, and a circuit element 13 formed on a poly silicon layer 12 formed on a part of the main surface of the compound semiconductor substrate through an insulating layer 11. The circuit element directly formed on the compound semiconductor substrate and the desired electrode section of the circuit element of the poly silicon layer are connected by a wiring layer 15 crawling on an insulating film covering the desired sections of both the circuit elements. For example, it is preferable that a field effect transistor 8 is formed on the main surface of the CaAs substrate 9 and a protective diode 13 is also formed on the poly silicon layer 12 formed on the GaAs substrate 9 through the insulating film.
JP9667981A 1981-06-24 1981-06-24 Semiconductor device Pending JPS57211782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9667981A JPS57211782A (en) 1981-06-24 1981-06-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9667981A JPS57211782A (en) 1981-06-24 1981-06-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57211782A true JPS57211782A (en) 1982-12-25

Family

ID=14171475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9667981A Pending JPS57211782A (en) 1981-06-24 1981-06-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57211782A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175164A (en) * 1983-03-24 1984-10-03 Seiko Epson Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59175164A (en) * 1983-03-24 1984-10-03 Seiko Epson Corp Semiconductor device

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