JPS54160186A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS54160186A
JPS54160186A JP6953578A JP6953578A JPS54160186A JP S54160186 A JPS54160186 A JP S54160186A JP 6953578 A JP6953578 A JP 6953578A JP 6953578 A JP6953578 A JP 6953578A JP S54160186 A JPS54160186 A JP S54160186A
Authority
JP
Japan
Prior art keywords
region
resistance element
layer
film
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6953578A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6953578A priority Critical patent/JPS54160186A/en
Publication of JPS54160186A publication Critical patent/JPS54160186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To minimize the chip size and thus to reduce cost by providing the diffusion region to be used as the resistance element at the surface region of the semiconductor substrate opposing to the metal wiring which connects the external connection metal thin wire and thus omitting the space to form the different resistance element. CONSTITUTION:P-type region 12 to be used as the resistance element is formed by diffusion at the surface region of N-type Si substrate 11, and the entire surface is covered with SiO2 film 12. Then contact hole 14a and 14b are drilled to film 13 of the area opposing to the both ends of region 12, and Al layer 15a and 15b are coated to cover film 13. Thus, an IC is formed with layer 15a and 15b used for the mutual wiring within IC and for the bonding pad each. And then wire 16 is attached, and region 13 between layer 15a and 15b is used as the resistance element. As a result, the formation of the resistance element can be omitted within the IC, thus increasing the degree of integration.
JP6953578A 1978-06-09 1978-06-09 Semiconductor integrated circuit device Pending JPS54160186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6953578A JPS54160186A (en) 1978-06-09 1978-06-09 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6953578A JPS54160186A (en) 1978-06-09 1978-06-09 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS54160186A true JPS54160186A (en) 1979-12-18

Family

ID=13405503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6953578A Pending JPS54160186A (en) 1978-06-09 1978-06-09 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS54160186A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929455A (en) * 1982-08-11 1984-02-16 Nec Corp Semiconductor device
JPS63204755A (en) * 1987-02-20 1988-08-24 Nec Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929455A (en) * 1982-08-11 1984-02-16 Nec Corp Semiconductor device
JPS63204755A (en) * 1987-02-20 1988-08-24 Nec Corp Semiconductor device

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