JPS5526683A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5526683A
JPS5526683A JP10028178A JP10028178A JPS5526683A JP S5526683 A JPS5526683 A JP S5526683A JP 10028178 A JP10028178 A JP 10028178A JP 10028178 A JP10028178 A JP 10028178A JP S5526683 A JPS5526683 A JP S5526683A
Authority
JP
Japan
Prior art keywords
region
substrate
type
pad
protection diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10028178A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10028178A priority Critical patent/JPS5526683A/en
Publication of JPS5526683A publication Critical patent/JPS5526683A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To raise a density of a device and a degree of freedom of a design without necessitating area by positioning a protection diode of a MOS type IC under an electrode pad. CONSTITUTION:A plurality of P-type regions 32 for protection diode are diffusion- formed in an N-type Si substrate 31 to cover the full surface with a SiO2 film 45. Subsequently, an N<+>-type region 41 for applying a VDD potential to the substrate 31 disposed between two regions of the region 32 is provided in the region 31 by providing an opening for a film 45. An electrode pad 42 is attached to the contact portion 41' of the region 41 to apply the VDD potential from the pad 42 to the substrate 31. An opening is given to the film 45 on the region 32 disposed at the both ends of the substrate 31, a P<+>-type region 33 is diffusion-formed, an electrode pad 43 is mounted onto a contact portion 33' of the region 33, and a GND potential is applied from the pad 43 to the region 32. According to such a construction, a protection diode is positioned under the pad region to eliminate the additional substrate area for mounting of the protection diode.
JP10028178A 1978-08-16 1978-08-16 Semiconductor integrated circuit device Pending JPS5526683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10028178A JPS5526683A (en) 1978-08-16 1978-08-16 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10028178A JPS5526683A (en) 1978-08-16 1978-08-16 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5526683A true JPS5526683A (en) 1980-02-26

Family

ID=14269804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10028178A Pending JPS5526683A (en) 1978-08-16 1978-08-16 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5526683A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (en) * 1982-03-17 1983-09-21 Nec Corp Input/output protecting device for semiconductor integrated circuit
JPS6246554A (en) * 1985-08-23 1987-02-28 Nec Corp Complementary type mos semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (en) * 1982-03-17 1983-09-21 Nec Corp Input/output protecting device for semiconductor integrated circuit
JPH0312472B2 (en) * 1982-03-17 1991-02-20 Nippon Electric Co
JPS6246554A (en) * 1985-08-23 1987-02-28 Nec Corp Complementary type mos semiconductor integrated circuit device

Similar Documents

Publication Publication Date Title
DE3480247D1 (en) Monolithic integrated semiconductor circuit
JPS54157092A (en) Semiconductor integrated circuit device
KR960009207A (en) Photodiode-embedded semiconductor device
JPS5526683A (en) Semiconductor integrated circuit device
JPS55163877A (en) Semiconductor integrated circuit device
UST955008I4 (en) Flip chip structure including a silicon semiconductor element bonded to an Si3 N4 base substrate
JPS5565453A (en) Semiconductor device
JPS57162360A (en) Complementary insulated gate field effect semiconductor device
JPS54138370A (en) Flip chip mounting body
JPS52122090A (en) Semiconductor integrated circuit device
GB1204805A (en) Semiconductor device
JPS5336184A (en) Semiconductor integrated circuit
JPH04206768A (en) Protecting circuit of semiconductor
JPS54160186A (en) Semiconductor integrated circuit device
JPS55166954A (en) Semiconductor device
JPS5718353A (en) Semiconductor device
JPS56138953A (en) Semiconductor device
JPS54149479A (en) Semiconductor device
KR910010700A (en) Vertical Monolithic Semiconductor Power Supplies Protected from Parasitic Currents
JPS57211741A (en) Semiconductor device
JPS57107043A (en) Semiconductor integrated circuit device
JPS5627945A (en) Semiconductor device with multilayered wiring
JPS6474731A (en) Semiconductor device
JPS57211782A (en) Semiconductor device
KR950009994A (en) Metal pad formation method of semiconductor device