JPS5565453A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5565453A
JPS5565453A JP13867778A JP13867778A JPS5565453A JP S5565453 A JPS5565453 A JP S5565453A JP 13867778 A JP13867778 A JP 13867778A JP 13867778 A JP13867778 A JP 13867778A JP S5565453 A JPS5565453 A JP S5565453A
Authority
JP
Japan
Prior art keywords
region
resistor
type
parasitic
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13867778A
Other languages
Japanese (ja)
Inventor
Yasuo Ueji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13867778A priority Critical patent/JPS5565453A/en
Publication of JPS5565453A publication Critical patent/JPS5565453A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the parasitic capacitance and increase the operational speed, by providing resistor elements in two regions of conduction type opposite to that of the semiconductor substrate and biasing one region via the resistance element of the other region. CONSTITUTION:An n-type regions 2 and 22 are formed on p<->-type semiconductor substrate 1 by dividing by a p-type region. p-type resistor 3 is formed in region 2, and p-type resistor 23 is formed in region 22. Region 2 is connected to electrode 24 on one side, and electrode 6 on the other side is connected to the maximum potential of the IC. For this reason, parasitic capacitance C1 is produced by parasitic junction 31 of resistor 3 and region 2, and parasitic capacitance C2 is produced by parasitic junctions 32, 33 and 34 between substrate 1 and resistor 23. Equivalent capacitance between terminals 5 and 1 becomes smaller than capacitance C1. By this structure, it is possible to reduce the capacitance parasitic to the resistor in the integrated semiconductor device and to increase its operational speed.
JP13867778A 1978-11-10 1978-11-10 Semiconductor device Pending JPS5565453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13867778A JPS5565453A (en) 1978-11-10 1978-11-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13867778A JPS5565453A (en) 1978-11-10 1978-11-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5565453A true JPS5565453A (en) 1980-05-16

Family

ID=15227519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13867778A Pending JPS5565453A (en) 1978-11-10 1978-11-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5565453A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159366A (en) * 1982-03-18 1983-09-21 Nec Corp Current mirror circuit
JPS60169161A (en) * 1984-02-13 1985-09-02 Rohm Co Ltd Capacitor element
US4578695A (en) * 1982-11-26 1986-03-25 International Business Machines Corporation Monolithic autobiased resistor structure and application thereof to interface circuits
JPS6292459A (en) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd Semiconductor capacity coupler element
JPS6292458A (en) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd Semiconductor capacity coupler element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132354A (en) * 1974-09-12 1976-03-18 Toho Gas Kk GASUMEETAA

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132354A (en) * 1974-09-12 1976-03-18 Toho Gas Kk GASUMEETAA

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159366A (en) * 1982-03-18 1983-09-21 Nec Corp Current mirror circuit
US4578695A (en) * 1982-11-26 1986-03-25 International Business Machines Corporation Monolithic autobiased resistor structure and application thereof to interface circuits
JPS60169161A (en) * 1984-02-13 1985-09-02 Rohm Co Ltd Capacitor element
JPH0449783B2 (en) * 1984-02-13 1992-08-12 Rohm Kk
JPS6292459A (en) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd Semiconductor capacity coupler element
JPS6292458A (en) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd Semiconductor capacity coupler element
JPH0453103B2 (en) * 1985-10-18 1992-08-25 Sanyo Electric Co
JPH0453104B2 (en) * 1985-10-18 1992-08-25 Sanyo Electric Co

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