JPS5378783A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5378783A
JPS5378783A JP15529176A JP15529176A JPS5378783A JP S5378783 A JPS5378783 A JP S5378783A JP 15529176 A JP15529176 A JP 15529176A JP 15529176 A JP15529176 A JP 15529176A JP S5378783 A JPS5378783 A JP S5378783A
Authority
JP
Japan
Prior art keywords
semiconductor device
well
type
mos
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15529176A
Other languages
Japanese (ja)
Inventor
Nobuo Sasaki
Motoo Nakano
Yasuo Kobayashi
Takashi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15529176A priority Critical patent/JPS5378783A/en
Publication of JPS5378783A publication Critical patent/JPS5378783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to cause C-MOS without a well, the normal MOS . FET with a well and the other element, formed on the p-type or n-type Si substrate of 1000OMEGAcm in specific resistance, to operate under the same condition as the conventional circuit.
JP15529176A 1976-12-23 1976-12-23 Semiconductor device Pending JPS5378783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15529176A JPS5378783A (en) 1976-12-23 1976-12-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15529176A JPS5378783A (en) 1976-12-23 1976-12-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5378783A true JPS5378783A (en) 1978-07-12

Family

ID=15602675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15529176A Pending JPS5378783A (en) 1976-12-23 1976-12-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378783A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586162A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586162A (en) * 1981-07-02 1983-01-13 Seiko Epson Corp Semiconductor device

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