JPS53108394A - Semiconductor intergrated circuit device - Google Patents

Semiconductor intergrated circuit device

Info

Publication number
JPS53108394A
JPS53108394A JP2270577A JP2270577A JPS53108394A JP S53108394 A JPS53108394 A JP S53108394A JP 2270577 A JP2270577 A JP 2270577A JP 2270577 A JP2270577 A JP 2270577A JP S53108394 A JPS53108394 A JP S53108394A
Authority
JP
Japan
Prior art keywords
circuit device
intergrated circuit
semiconductor intergrated
semiconductor
dispersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2270577A
Other languages
Japanese (ja)
Inventor
Kazuo Hoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2270577A priority Critical patent/JPS53108394A/en
Publication of JPS53108394A publication Critical patent/JPS53108394A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To extremely reduce the dispersion in resistance value and the correction, by taking the size of the contact hole larger than the width of the P type diffusion layer.
JP2270577A 1977-03-04 1977-03-04 Semiconductor intergrated circuit device Pending JPS53108394A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2270577A JPS53108394A (en) 1977-03-04 1977-03-04 Semiconductor intergrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2270577A JPS53108394A (en) 1977-03-04 1977-03-04 Semiconductor intergrated circuit device

Publications (1)

Publication Number Publication Date
JPS53108394A true JPS53108394A (en) 1978-09-21

Family

ID=12090263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2270577A Pending JPS53108394A (en) 1977-03-04 1977-03-04 Semiconductor intergrated circuit device

Country Status (1)

Country Link
JP (1) JPS53108394A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179249A (en) * 1984-09-26 1986-04-22 Nec Corp Semiconductor device
JPS6186942U (en) * 1984-11-12 1986-06-07
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS6179249A (en) * 1984-09-26 1986-04-22 Nec Corp Semiconductor device
JPS6186942U (en) * 1984-11-12 1986-06-07

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