JPS5366178A - Input protecting circuit - Google Patents

Input protecting circuit

Info

Publication number
JPS5366178A
JPS5366178A JP14120876A JP14120876A JPS5366178A JP S5366178 A JPS5366178 A JP S5366178A JP 14120876 A JP14120876 A JP 14120876A JP 14120876 A JP14120876 A JP 14120876A JP S5366178 A JPS5366178 A JP S5366178A
Authority
JP
Japan
Prior art keywords
protecting circuit
input protecting
input
layer
resistances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14120876A
Other languages
Japanese (ja)
Inventor
Kenji Maeguchi
Hiroyuki Tango
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14120876A priority Critical patent/JPS5366178A/en
Publication of JPS5366178A publication Critical patent/JPS5366178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To achieve the effective reduction in the occupying area of an input protecting circuit by using layer resistance larger than the diffusion resistances and poly - Si layer resistances used within an IC.
JP14120876A 1976-11-26 1976-11-26 Input protecting circuit Pending JPS5366178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14120876A JPS5366178A (en) 1976-11-26 1976-11-26 Input protecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14120876A JPS5366178A (en) 1976-11-26 1976-11-26 Input protecting circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59049174A Division JPS6035575A (en) 1984-03-16 1984-03-16 Mos integrated circuit

Publications (1)

Publication Number Publication Date
JPS5366178A true JPS5366178A (en) 1978-06-13

Family

ID=15286646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14120876A Pending JPS5366178A (en) 1976-11-26 1976-11-26 Input protecting circuit

Country Status (1)

Country Link
JP (1) JPS5366178A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546584A (en) * 1978-09-29 1980-04-01 Nec Corp Complementary insulated gate field effect semiconductor device and method of fabricating the same
JPS5635470A (en) * 1979-08-30 1981-04-08 Nec Corp Semiconductor device
JPS58151062A (en) * 1982-01-28 1983-09-08 Toshiba Corp Semiconductor device
JPS58218170A (en) * 1982-06-14 1983-12-19 Seiko Epson Corp Electrostatic protective circuit for mosic
JPH027474A (en) * 1988-06-24 1990-01-11 Sony Corp Semiconductor device
JPH0590523A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590521A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546584A (en) * 1978-09-29 1980-04-01 Nec Corp Complementary insulated gate field effect semiconductor device and method of fabricating the same
JPS5635470A (en) * 1979-08-30 1981-04-08 Nec Corp Semiconductor device
JPH0456469B2 (en) * 1982-01-28 1992-09-08 Tokyo Shibaura Electric Co
JPS58151062A (en) * 1982-01-28 1983-09-08 Toshiba Corp Semiconductor device
JPH0458708B2 (en) * 1982-06-14 1992-09-18 Seiko Epson Corp
JPS58218170A (en) * 1982-06-14 1983-12-19 Seiko Epson Corp Electrostatic protective circuit for mosic
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US5436484A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having input protective elements and internal circuits
US5436483A (en) * 1983-12-26 1995-07-25 Hitachi, Ltd. Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
JPH027474A (en) * 1988-06-24 1990-01-11 Sony Corp Semiconductor device
JPH0590523A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590521A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device

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