JPS5635470A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5635470A JPS5635470A JP11148179A JP11148179A JPS5635470A JP S5635470 A JPS5635470 A JP S5635470A JP 11148179 A JP11148179 A JP 11148179A JP 11148179 A JP11148179 A JP 11148179A JP S5635470 A JPS5635470 A JP S5635470A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- drain
- lead wire
- connecting part
- external lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910018125 Al-Si Inorganic materials 0.000 abstract 1
- 229910018520 Al—Si Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000006378 damage Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Abstract
PURPOSE:To obtain a high withstand voltage and a high speed IC device by forming a wiring layer from an external lead wire and a diffused layer around the connecting part of the wiring layer deeper than the source and the drain and forming a polysilicon layer or the like on the connecting part, thereby suppressing the alloying reaction of Al-Si. CONSTITUTION:The N type source 13, drain 14 and a resistance layer 15 for a protective circuit are formed on a P type Si substrate 6. Then, an N type layer 16 of a connecting part 7 of an electrode 3 from the external lead wire to the layer 15 is formed deeper than the source and the drain. A field oxide film 4 is formed, an aluminum electrode is formed through polysilicon 17, an SiO2 2 is coated thereon, and an opening 9 is thereafter perforated, and gold wires 1 are connected to the external lead wire and the electrode 3. According to this configuration, the device is accelerated in operation, highly integrated, and an MOSIC having high electrostatic destruction withstand voltage can be obtained and the reliability thereof can be enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11148179A JPS5635470A (en) | 1979-08-30 | 1979-08-30 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11148179A JPS5635470A (en) | 1979-08-30 | 1979-08-30 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5635470A true JPS5635470A (en) | 1981-04-08 |
Family
ID=14562341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11148179A Pending JPS5635470A (en) | 1979-08-30 | 1979-08-30 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5635470A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4893157A (en) * | 1984-08-24 | 1990-01-09 | Hitachi, Ltd. | Semiconductor device |
| US4893159A (en) * | 1985-09-25 | 1990-01-09 | Kabushiki Kaisha Toshiba | Protected MOS transistor circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116082A (en) * | 1976-03-25 | 1977-09-29 | Mitsubishi Electric Corp | Preparation of mos type semiconductor device |
| JPS5366178A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Input protecting circuit |
| JPS5496382A (en) * | 1978-01-17 | 1979-07-30 | Toshiba Corp | Semiconductor integrated circuit device |
-
1979
- 1979-08-30 JP JP11148179A patent/JPS5635470A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116082A (en) * | 1976-03-25 | 1977-09-29 | Mitsubishi Electric Corp | Preparation of mos type semiconductor device |
| JPS5366178A (en) * | 1976-11-26 | 1978-06-13 | Toshiba Corp | Input protecting circuit |
| JPS5496382A (en) * | 1978-01-17 | 1979-07-30 | Toshiba Corp | Semiconductor integrated circuit device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4893157A (en) * | 1984-08-24 | 1990-01-09 | Hitachi, Ltd. | Semiconductor device |
| US4893159A (en) * | 1985-09-25 | 1990-01-09 | Kabushiki Kaisha Toshiba | Protected MOS transistor circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5619639A (en) | Semiconductor device | |
| JPS5635470A (en) | Semiconductor device | |
| JPS5748247A (en) | Semiconductor integrated circuit device | |
| JPS5445570A (en) | Manufacture for semiconductor element | |
| JPS5615065A (en) | Semiconductor integrated circuit | |
| FR2309979A1 (en) | Semiconductor device with switching elements - has connecting points, each with protective coating of silcon dioxide (NL011176) | |
| JPS54133877A (en) | Semiconductor device | |
| JPS5762544A (en) | Semiconductor device | |
| JPS577950A (en) | Semiconductor integrated circuit device | |
| JPS5740941A (en) | Formation of protective film in hybrid integrated circuit | |
| JPS54160186A (en) | Semiconductor integrated circuit device | |
| JPS6482656A (en) | Sealing structure for hybrid integrated circuit | |
| JPS56165345A (en) | Semiconductor device | |
| JPS56158466A (en) | Semiconductor device | |
| JPS5292478A (en) | Semiconductor device and its preparation | |
| JPS57133657A (en) | Semiconductor device | |
| JPS5787147A (en) | Semiconductor device and manufacture thereof | |
| JPS57109350A (en) | Semiconductor device | |
| JPS56120165A (en) | Protecting device for input of semiconductor device | |
| JPS5578563A (en) | Semiconductor device | |
| JPS568850A (en) | Semiconductor device with metal projection | |
| JPS56105644A (en) | Semiconductor ic device | |
| JPS56104464A (en) | Semiconductor device | |
| JPS558053A (en) | Semiconductor and manufacture thereof | |
| GB1282740A (en) | Radiation resistant semiconductor device |