JPS56104464A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56104464A JPS56104464A JP570680A JP570680A JPS56104464A JP S56104464 A JPS56104464 A JP S56104464A JP 570680 A JP570680 A JP 570680A JP 570680 A JP570680 A JP 570680A JP S56104464 A JPS56104464 A JP S56104464A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- emitter
- under
- bonding pad
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 229910000967 As alloy Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910001120 nichrome Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
- H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To equalize the emitter current for the semiconductor device and to obtain a mesh emitter type transistor which increases its reliability by inserting a thin film resistor for dispersing a current between the emitter contact unit under a bonding pad and a wiring layer. CONSTITUTION:A P type diffused base and an N<+> type diffused emitter are formed in an N type Si substrate 1, and covered with a surface oxide film 8. A plurality of contact holes 4 are formed at the film 8. A thin film 9 having a resistor under the aluminum wiring layer 5 is so formed that only a series resistor is inserted only into the contact windows 4a, 4b under the bonding pad. A relatively high resistor such as alloy like polysilicon, nichrome or the like is adapted for the thin film 9 having a resistor. Thus, the resistance under the bonding pad is increased, and the breakdown strength is increased to improve the reliability thereof by dispersing the current therethrough.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP570680A JPS56104464A (en) | 1980-01-23 | 1980-01-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP570680A JPS56104464A (en) | 1980-01-23 | 1980-01-23 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56104464A true JPS56104464A (en) | 1981-08-20 |
Family
ID=11618549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP570680A Pending JPS56104464A (en) | 1980-01-23 | 1980-01-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56104464A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5923753U (en) * | 1982-08-02 | 1984-02-14 | 三洋電機株式会社 | transistor |
-
1980
- 1980-01-23 JP JP570680A patent/JPS56104464A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5923753U (en) * | 1982-08-02 | 1984-02-14 | 三洋電機株式会社 | transistor |
| JPH0220832Y2 (en) * | 1982-08-02 | 1990-06-06 |
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