JPS57170561A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57170561A
JPS57170561A JP5532681A JP5532681A JPS57170561A JP S57170561 A JPS57170561 A JP S57170561A JP 5532681 A JP5532681 A JP 5532681A JP 5532681 A JP5532681 A JP 5532681A JP S57170561 A JPS57170561 A JP S57170561A
Authority
JP
Japan
Prior art keywords
type
hfe
diffused
collector
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5532681A
Other languages
Japanese (ja)
Inventor
Giichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP5532681A priority Critical patent/JPS57170561A/en
Publication of JPS57170561A publication Critical patent/JPS57170561A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To always flow the prescribed current to a load which is connected to a collector even if hFE is varied in the manufacture by employing a diffused resistor having a correlation with the hFE. CONSTITUTION:A P type base 8a and a strip resistance layer 8b are simultaneously formed in an N type Si 7, and an N<+> type layer 9b and an N<+> type collector connection layer 9c are simultaneously formed except both ends of an N<+> type emitter 9a and a strip P type resistance layer 8b. A hole 11 is opened at the surface insulating film, and electrodes are attached thereto. Since the layers 8a-8b, 9a-9b are simultaneously diffused, a simply increasing correlation is produced between the hFE of a transistor 1 and the diffused resistors 2, 3. Accordingly, R/hFE does not vary, and the collector current IC is constant irrespective of the value of the hFE.
JP5532681A 1981-04-13 1981-04-13 Semiconductor integrated circuit Pending JPS57170561A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5532681A JPS57170561A (en) 1981-04-13 1981-04-13 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5532681A JPS57170561A (en) 1981-04-13 1981-04-13 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS57170561A true JPS57170561A (en) 1982-10-20

Family

ID=12995411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5532681A Pending JPS57170561A (en) 1981-04-13 1981-04-13 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57170561A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50122185A (en) * 1974-03-13 1975-09-25
JPS5165584A (en) * 1974-12-04 1976-06-07 Hitachi Ltd TEIKOTAINOKEISEIHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50122185A (en) * 1974-03-13 1975-09-25
JPS5165584A (en) * 1974-12-04 1976-06-07 Hitachi Ltd TEIKOTAINOKEISEIHOHO

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