JPS55117274A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55117274A
JPS55117274A JP2377079A JP2377079A JPS55117274A JP S55117274 A JPS55117274 A JP S55117274A JP 2377079 A JP2377079 A JP 2377079A JP 2377079 A JP2377079 A JP 2377079A JP S55117274 A JPS55117274 A JP S55117274A
Authority
JP
Japan
Prior art keywords
layer
emitter
stabilizing
electrode
stabilize
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2377079A
Other languages
Japanese (ja)
Inventor
Takaaki Kitada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2377079A priority Critical patent/JPS55117274A/en
Publication of JPS55117274A publication Critical patent/JPS55117274A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To thermally stabilize the emitter current of a semiconductor device by connecting stabilizing resistors to all points on the emitter layer thereof in parallel. CONSTITUTION:A base layer 13 and an emitter layer 14 are formed on a semiconductor substrate 16 for operating as a collector, and connecting holes of layers 13 and 14 are formed at an insulating layer 17. A polysilicon layer 18 is formed on the layer 14 in desired resistivity and thickness, an electrode 12 is formed thereon, and the layer 18 between the layer 14 and the electrode 12 is used as an emitter stabilizing resistor. Thus, the stabilizing resistor is disposed on the layer 14 to increase no junction capacity between the stabilizing resistor and the collector. Thus, the stabilizing resistors on the emitter layer are all connected in parallel with the electrode 12 to stabilize the transistor current and thermally stabilize the device.
JP2377079A 1979-03-01 1979-03-01 Semiconductor device Pending JPS55117274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2377079A JPS55117274A (en) 1979-03-01 1979-03-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2377079A JPS55117274A (en) 1979-03-01 1979-03-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55117274A true JPS55117274A (en) 1980-09-09

Family

ID=12119572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2377079A Pending JPS55117274A (en) 1979-03-01 1979-03-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55117274A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122777A (en) * 1982-01-14 1983-07-21 Toshiba Corp Semiconductor device
JPH0391244A (en) * 1989-09-02 1991-04-16 Fuji Electric Co Ltd Vertical bipolar transistor for integrated circuit
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122777A (en) * 1982-01-14 1983-07-21 Toshiba Corp Semiconductor device
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
JPH0391244A (en) * 1989-09-02 1991-04-16 Fuji Electric Co Ltd Vertical bipolar transistor for integrated circuit

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