JPS5731173A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5731173A JPS5731173A JP10663980A JP10663980A JPS5731173A JP S5731173 A JPS5731173 A JP S5731173A JP 10663980 A JP10663980 A JP 10663980A JP 10663980 A JP10663980 A JP 10663980A JP S5731173 A JPS5731173 A JP S5731173A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- substrate
- emitter resistance
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To determine an arbitary and large value of an emitter resistance without being limited by the composition of an emitter, by a method wherein the emitter and the emitter resistance are made independent each other by taking the emitter electrode out of a semiconductor substrate and composing the emitter resistance with the substrate. CONSTITUTION:A P<+> layer 110 and an epitaxial layer 111, which is piled on the layer 110, compose a substrate 11. The layer 111 is utilized as an emitter resistance and its value is arbitrarily determined at a value not more than 100ohms by controlling the specific resistivity and the thickness. An N buried layer 12 is provided and an epitaxial layer 13 is piled over it. The epitaxial layer 13 is devided by a P layer 15, and a collector, layer 14 is segmented. The N<+> layer 19 are provided and connected to the buried layer 12. In the N collector 14, a P base 16 and an N emitter 17 are produced. The surface is covered by an SiO2 film 20, in which an aperture is made. Al electrodes 21, 22, the P layers 15 and a connecting conductor 18 of the N emitter 17 are connected to the N<+> layers 19 and the P base 16. The electrode 23 of the emitter resistance is connected to the main surface of the substrate and the device is completed. The transistor produced by above method has such characteristics that hFE drops rapidly in accordance with large collector current and can provide excellent current limiting function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10663980A JPS5731173A (en) | 1980-08-01 | 1980-08-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10663980A JPS5731173A (en) | 1980-08-01 | 1980-08-01 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5731173A true JPS5731173A (en) | 1982-02-19 |
| JPH0132666B2 JPH0132666B2 (en) | 1989-07-10 |
Family
ID=14438680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10663980A Granted JPS5731173A (en) | 1980-08-01 | 1980-08-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5731173A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63194351A (en) * | 1987-02-09 | 1988-08-11 | Mitsubishi Electric Corp | Semiconductor device |
| JPH02137232A (en) * | 1988-11-17 | 1990-05-25 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
-
1980
- 1980-08-01 JP JP10663980A patent/JPS5731173A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63194351A (en) * | 1987-02-09 | 1988-08-11 | Mitsubishi Electric Corp | Semiconductor device |
| JPH02137232A (en) * | 1988-11-17 | 1990-05-25 | Sanyo Electric Co Ltd | Semiconductor integrated circuit |
| JPH088261B2 (en) * | 1988-11-17 | 1996-01-29 | 三洋電機株式会社 | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0132666B2 (en) | 1989-07-10 |
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