JPS5621359A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5621359A
JPS5621359A JP9767379A JP9767379A JPS5621359A JP S5621359 A JPS5621359 A JP S5621359A JP 9767379 A JP9767379 A JP 9767379A JP 9767379 A JP9767379 A JP 9767379A JP S5621359 A JPS5621359 A JP S5621359A
Authority
JP
Japan
Prior art keywords
layer
terminal
resistor element
potential difference
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9767379A
Other languages
Japanese (ja)
Inventor
Tsuneo Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9767379A priority Critical patent/JPS5621359A/en
Publication of JPS5621359A publication Critical patent/JPS5621359A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the voltage dependence of resistor element by providing a conductive poly Si layer through an insulating film of required film thick on a resistor element wherein each high potential difference side for the substrate is connected. CONSTITUTION:A p-type resistor element 3 is formed on the n epitaxial layer 2 of a p-type Si substrate 1 and p<+> electrode connection layers 4, 5 and an n<+> connection layer 6 are provided. A conductive poly Si layer 7 is provided through an SiO2 film 8 of about 5,000Angstrom thick and connected to a terminal c on a p<+>-layer 4. A terminal d on a p<+>-layer 5 is connected to an n<+>-layer 6. If a negative potential is applied to the terminal c and a positive potential to the terminal d, holes will be stored near the terminal d and more holes will be stored as the potential difference between the terminal c and the epitaxial layer increases. Therefore, the resistance becmes small and a depletion layer near the terminal c expands with potential difference and the whole resistance value will almost remain unchanged even if the resistance increases. In this way, the voltage dependence of the resistor element will be minimized.
JP9767379A 1979-07-31 1979-07-31 Semiconductor device Pending JPS5621359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9767379A JPS5621359A (en) 1979-07-31 1979-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9767379A JPS5621359A (en) 1979-07-31 1979-07-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5621359A true JPS5621359A (en) 1981-02-27

Family

ID=14198531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9767379A Pending JPS5621359A (en) 1979-07-31 1979-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5621359A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1184909A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit
EP1184910A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5087593A (en) * 1973-12-06 1975-07-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5087593A (en) * 1973-12-06 1975-07-14

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1184909A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit
EP1184910A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
EP1184910A3 (en) * 2000-08-30 2004-10-13 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
EP1184909A3 (en) * 2000-08-30 2004-10-13 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
KR100870256B1 (en) * 2000-08-30 2008-11-25 에이저 시스템즈 가디언 코포레이션 Field Plated Resistor with Enhanced Routing Area Thereover

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