JPS55125646A - Semiconductor device - Google Patents

Abstract

PURPOSE:To integrate a miniaturized, high resistance element that it can be controlled conveniently, by laminating an aluminum layer on a predetermined portion of a thin poly-Si layer to form an electrode wire, and selectively remove the aluminum layer. CONSTITUTION:A field oxide film 12 and a gate oxide film 13 are formed on a p-type Si substrate 11. Poly-Si layers 141, 142 are provided, and openings are made in the film 13. An n<+> diffusion layers 15, 16 are formed, and the resistance of the layers 141, 142 is set to a low level. A CVDSiO2 film 17 is then formed, and openings are made therein. Non-additive type poly-Si layer 18 and an aluminum layer 19 to which approximately 1% Si is added are formed in layers. The layers 19, 18 are etched in the mentioned order to form electrode wires in the layers 15, 16 and a wire which is to be connected to the wire 142. A part of an aluminum layer 192 is then selectively removed to expose a Si layer 182 and form a high resistance element R having aluminum layers 1921, 1922 as terminal electrodes. Thus, a device, in which a miniaturized high resistance element having a high controllability is integrated, can be obtained. This device can be advantageously used to integrate, and improve the performance of, an enhancement/resistor type static RAM and the like.