JPS54131888A - Manufacture of mos-type semiconductor device - Google Patents
Manufacture of mos-type semiconductor deviceInfo
- Publication number
- JPS54131888A JPS54131888A JP3943378A JP3943378A JPS54131888A JP S54131888 A JPS54131888 A JP S54131888A JP 3943378 A JP3943378 A JP 3943378A JP 3943378 A JP3943378 A JP 3943378A JP S54131888 A JPS54131888 A JP S54131888A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- selectively
- sio
- mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To realize the miniaturization, high-degree integration and high performance for the element without complicating the conventional manufacturing process.
CONSTITUTION: Selective oxidation 14 is given to SiO212 on p-type Si substrate 11 via the mask of Si3N413. Mask 13 is removed selectively, and the phosphorus is diffused to form n+ layer 15 which is then turned to the internal wiring layer of about 5Ω/opening through the 10-minute treatment at 1000°C. Then film 13 and 12 are removed with SiO216 and poly Si electrode 17 formed selectively, and n+ layer 18 and 19 are formed by injection of the As ion. Layer 19 and 15 are then unified together. Then the substrate is covered with CVDSiO2 with the opening drilled selectively to complete the Al wiring. In this way, the microstructure of the gate length 4μm or less can be obtained under the good controlability to promote the integration furthermore. At the same time, the layer resistance can be reduced since internal wiring layer 15 is formed previously, avoiding the signal delay and a large amount of voltage drop.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3943378A JPS54131888A (en) | 1978-04-04 | 1978-04-04 | Manufacture of mos-type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3943378A JPS54131888A (en) | 1978-04-04 | 1978-04-04 | Manufacture of mos-type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54131888A true JPS54131888A (en) | 1979-10-13 |
Family
ID=12552856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3943378A Pending JPS54131888A (en) | 1978-04-04 | 1978-04-04 | Manufacture of mos-type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54131888A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5397715A (en) * | 1993-10-21 | 1995-03-14 | Micrel, Incorporated | MOS transistor having increased gate-drain capacitance |
-
1978
- 1978-04-04 JP JP3943378A patent/JPS54131888A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5397715A (en) * | 1993-10-21 | 1995-03-14 | Micrel, Incorporated | MOS transistor having increased gate-drain capacitance |
US5625216A (en) * | 1993-10-21 | 1997-04-29 | Micrel, Inc. | MOS transistor having increased gate-drain capacitance |
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