JPS5522885A - Insulation gate type field effect semiconductor device - Google Patents

Insulation gate type field effect semiconductor device

Info

Publication number
JPS5522885A
JPS5522885A JP10577078A JP10577078A JPS5522885A JP S5522885 A JPS5522885 A JP S5522885A JP 10577078 A JP10577078 A JP 10577078A JP 10577078 A JP10577078 A JP 10577078A JP S5522885 A JPS5522885 A JP S5522885A
Authority
JP
Japan
Prior art keywords
layer
sio
successively
gate electrode
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10577078A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP10577078A priority Critical patent/JPS5522885A/en
Publication of JPS5522885A publication Critical patent/JPS5522885A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a composite MISFET device by providing a semiconductor nade gate electrode on a gate insulator having a charge capturecenter in the interior and further permitting one end of a source and drain to coincide with a gate electrode end and the other end to meet the side face of a field insulation layer.
CONSTITUTION: A field oxidization layer is buried in a p-type Si substrate face, n+Si layers 4 and 5 being coverd with a Pt coating are selectively formed on the layer. Successively, an SiO26, Si3N47 and SiO28 are laminated to use a charge capture center in the layer film 7 for a non-volatile memory. Successively, a p+Si layer 9 and Mo layer 10 are laminated, a gate electrode 15 and capacity 10 are formed by an etching, and an n+ diffusion opening 13 and 14 are provided for the opening. According to such a process, an elementary cell of a small non-volatile memory and a normal MISFET can be formed at the same time on the same substrate. Successively, an SiO216 is covered and an opening is selectively provided to form an Al wiring 18.
COPYRIGHT: (C)1980,JPO&Japio
JP10577078A 1978-08-30 1978-08-30 Insulation gate type field effect semiconductor device Pending JPS5522885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10577078A JPS5522885A (en) 1978-08-30 1978-08-30 Insulation gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10577078A JPS5522885A (en) 1978-08-30 1978-08-30 Insulation gate type field effect semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3062571A Division JPS5624385B1 (en) 1971-05-07 1971-05-07

Publications (1)

Publication Number Publication Date
JPS5522885A true JPS5522885A (en) 1980-02-18

Family

ID=14416395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10577078A Pending JPS5522885A (en) 1978-08-30 1978-08-30 Insulation gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522885A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587876A (en) * 1981-07-07 1983-01-17 Nec Corp Field effect transistor and manufacture thereof
JPH06300261A (en) * 1993-04-19 1994-10-28 Matsushima Seisakusho:Kk Ignition/firing device for gas lamp
US8702421B2 (en) 2008-03-24 2014-04-22 Shinfuji Burner Co., Ltd. Burner

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS587876A (en) * 1981-07-07 1983-01-17 Nec Corp Field effect transistor and manufacture thereof
JPH06300261A (en) * 1993-04-19 1994-10-28 Matsushima Seisakusho:Kk Ignition/firing device for gas lamp
US8702421B2 (en) 2008-03-24 2014-04-22 Shinfuji Burner Co., Ltd. Burner

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