JPS5522885A - Insulation gate type field effect semiconductor device - Google Patents
Insulation gate type field effect semiconductor deviceInfo
- Publication number
- JPS5522885A JPS5522885A JP10577078A JP10577078A JPS5522885A JP S5522885 A JPS5522885 A JP S5522885A JP 10577078 A JP10577078 A JP 10577078A JP 10577078 A JP10577078 A JP 10577078A JP S5522885 A JPS5522885 A JP S5522885A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio
- successively
- gate electrode
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a composite MISFET device by providing a semiconductor nade gate electrode on a gate insulator having a charge capturecenter in the interior and further permitting one end of a source and drain to coincide with a gate electrode end and the other end to meet the side face of a field insulation layer.
CONSTITUTION: A field oxidization layer is buried in a p-type Si substrate face, n+Si layers 4 and 5 being coverd with a Pt coating are selectively formed on the layer. Successively, an SiO26, Si3N47 and SiO28 are laminated to use a charge capture center in the layer film 7 for a non-volatile memory. Successively, a p+Si layer 9 and Mo layer 10 are laminated, a gate electrode 15 and capacity 10 are formed by an etching, and an n+ diffusion opening 13 and 14 are provided for the opening. According to such a process, an elementary cell of a small non-volatile memory and a normal MISFET can be formed at the same time on the same substrate. Successively, an SiO216 is covered and an opening is selectively provided to form an Al wiring 18.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10577078A JPS5522885A (en) | 1978-08-30 | 1978-08-30 | Insulation gate type field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10577078A JPS5522885A (en) | 1978-08-30 | 1978-08-30 | Insulation gate type field effect semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3062571A Division JPS5624385B1 (en) | 1971-05-07 | 1971-05-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5522885A true JPS5522885A (en) | 1980-02-18 |
Family
ID=14416395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10577078A Pending JPS5522885A (en) | 1978-08-30 | 1978-08-30 | Insulation gate type field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5522885A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587876A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Field effect transistor and manufacture thereof |
JPH06300261A (en) * | 1993-04-19 | 1994-10-28 | Matsushima Seisakusho:Kk | Ignition/firing device for gas lamp |
US8702421B2 (en) | 2008-03-24 | 2014-04-22 | Shinfuji Burner Co., Ltd. | Burner |
-
1978
- 1978-08-30 JP JP10577078A patent/JPS5522885A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587876A (en) * | 1981-07-07 | 1983-01-17 | Nec Corp | Field effect transistor and manufacture thereof |
JPH06300261A (en) * | 1993-04-19 | 1994-10-28 | Matsushima Seisakusho:Kk | Ignition/firing device for gas lamp |
US8702421B2 (en) | 2008-03-24 | 2014-04-22 | Shinfuji Burner Co., Ltd. | Burner |
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