JPS5591166A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5591166A
JPS5591166A JP16336478A JP16336478A JPS5591166A JP S5591166 A JPS5591166 A JP S5591166A JP 16336478 A JP16336478 A JP 16336478A JP 16336478 A JP16336478 A JP 16336478A JP S5591166 A JPS5591166 A JP S5591166A
Authority
JP
Japan
Prior art keywords
type
layer
electrode
drain
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16336478A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Yasunori Mochida
Terumoto Nonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP16336478A priority Critical patent/JPS5591166A/en
Priority to DE19792952513 priority patent/DE2952513A1/en
Publication of JPS5591166A publication Critical patent/JPS5591166A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Abstract

PURPOSE:To improve simultaneously both the increase in storage capacity of and the integration degree of a semiconductor memory by forming one electrode of a capacity disposed at a drain region of a conductive layer having wire area introduced from the drain region. CONSTITUTION:An n<->-type epitaxial layer 16 is laminated through an n<+>-type buried source layer 14 on a p<->-type silicon substrate 12 to thereby form a p<+>-type gate layer 18A selectively. An n<+>-type drain layer 20 is then formed on the n<->-type channel region 16A interposed between the layers 18A. After the layer 20 portion is removed and selectively coated with a SiO2 film 22, a polycrystalline silicon is accumulated on the film 22 and photoetched to thereby form a drain electrode 24 thereon. In this step the polycrystalline silicon is conducted, and diffused through the electrode 24 to thereby form the n<+>-type drain layer 20. A word line aluminum electrode 28 is then formed through a Si3N4 film 26 on the electrode 24. According to this configuration an information storage capacity C is connected to the SIT drain electrode 24 and yet increased regardless of the sectional area of the channel. Thus, even if the cell size is reduced to thereby increase the integration degree, it can prevent the capacity from decreasing.
JP16336478A 1978-12-28 1978-12-28 Semiconductor memory Pending JPS5591166A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP16336478A JPS5591166A (en) 1978-12-28 1978-12-28 Semiconductor memory
DE19792952513 DE2952513A1 (en) 1978-12-28 1979-12-28 Semiconductor memory - consisting of static induction transistor and superimposed capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16336478A JPS5591166A (en) 1978-12-28 1978-12-28 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5591166A true JPS5591166A (en) 1980-07-10

Family

ID=15772468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16336478A Pending JPS5591166A (en) 1978-12-28 1978-12-28 Semiconductor memory

Country Status (2)

Country Link
JP (1) JPS5591166A (en)
DE (1) DE2952513A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69416619T2 (en) * 1993-05-12 1999-09-30 Zaidan Hojin Handotai Kenkyu Semiconductor memory device and manufacturing method
DE4331391A1 (en) * 1993-09-15 1995-03-16 Josef Dr Kemmer Semiconductor (detector) structure

Also Published As

Publication number Publication date
DE2952513A1 (en) 1980-07-17

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