JPS56107571A - Semiconductor memory storage device - Google Patents

Semiconductor memory storage device

Info

Publication number
JPS56107571A
JPS56107571A JP960680A JP960680A JPS56107571A JP S56107571 A JPS56107571 A JP S56107571A JP 960680 A JP960680 A JP 960680A JP 960680 A JP960680 A JP 960680A JP S56107571 A JPS56107571 A JP S56107571A
Authority
JP
Japan
Prior art keywords
insulating layer
capacity
film
incoming
error due
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP960680A
Other languages
Japanese (ja)
Other versions
JPH0131308B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP960680A priority Critical patent/JPS56107571A/en
Publication of JPS56107571A publication Critical patent/JPS56107571A/en
Publication of JPH0131308B2 publication Critical patent/JPH0131308B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent occurrence of a soft error due to incoming of alpha rays by adding electrostatic capacity arising on a buried insulating layer to a memory capacitor to increase capacitor essentially. CONSTITUTION:A buried insulating layer 12 consisting of an SiO2 film is formed selectively on a P<+> type silicon substrate 11, and also a P<-> type epitaxial layer 13a and a polysilicon layer 13b are formed. Further, a field oxide film 14 is formed with an insulating layer 15 consisting of an Si3N4 film as a mask, and also a polycrystalline silicon electrode 16, an SiO2 film 18 and a polycrystalline gate electrode 19 are formed. According to the above constitution, capacity C2 with the insulating layer 15 as a dielectric and capacity C1 with the bruied insulating layer 12 as a dielectic are connected in parallel to constitute a dynamic memory cell. A storage capacity can be increased two times or more thereby to prevent occurrence of a soft error due to incoming of alpha rays.
JP960680A 1980-01-30 1980-01-30 Semiconductor memory storage device Granted JPS56107571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP960680A JPS56107571A (en) 1980-01-30 1980-01-30 Semiconductor memory storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP960680A JPS56107571A (en) 1980-01-30 1980-01-30 Semiconductor memory storage device

Publications (2)

Publication Number Publication Date
JPS56107571A true JPS56107571A (en) 1981-08-26
JPH0131308B2 JPH0131308B2 (en) 1989-06-26

Family

ID=11724955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP960680A Granted JPS56107571A (en) 1980-01-30 1980-01-30 Semiconductor memory storage device

Country Status (1)

Country Link
JP (1) JPS56107571A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176757A (en) * 1981-04-22 1982-10-30 Nec Corp Semiconductor device
EP0083210A2 (en) * 1981-12-29 1983-07-06 Fujitsu Limited A semiconductor device which prevents soft errors
JPS58204568A (en) * 1982-05-24 1983-11-29 Hitachi Ltd Semiconductor device
JPS5928373A (en) * 1982-08-09 1984-02-15 Nec Corp Semiconductor device
JPS6151965A (en) * 1984-08-22 1986-03-14 Nec Corp Semiconductor memory device
JPS6151964A (en) * 1984-08-22 1986-03-14 Nec Corp Semiconductor device
JPS61170060A (en) * 1985-01-23 1986-07-31 Mitsubishi Electric Corp Semiconductor memory
JPS63246866A (en) * 1987-04-01 1988-10-13 Mitsubishi Electric Corp Manufacture of one-transistor type dynamic memory cell
US5594698A (en) * 1993-03-17 1997-01-14 Zycad Corporation Random access memory (RAM) based configurable arrays

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519820A (en) * 1978-07-27 1980-02-12 Nec Corp Semiconductor device
JPS5670657A (en) * 1979-11-14 1981-06-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519820A (en) * 1978-07-27 1980-02-12 Nec Corp Semiconductor device
JPS5670657A (en) * 1979-11-14 1981-06-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176757A (en) * 1981-04-22 1982-10-30 Nec Corp Semiconductor device
JPH0320906B2 (en) * 1981-04-22 1991-03-20 Nippon Electric Co
EP0083210A2 (en) * 1981-12-29 1983-07-06 Fujitsu Limited A semiconductor device which prevents soft errors
JPS58204568A (en) * 1982-05-24 1983-11-29 Hitachi Ltd Semiconductor device
JPH046106B2 (en) * 1982-05-24 1992-02-04 Hitachi Ltd
JPS5928373A (en) * 1982-08-09 1984-02-15 Nec Corp Semiconductor device
JPS6151965A (en) * 1984-08-22 1986-03-14 Nec Corp Semiconductor memory device
JPS6151964A (en) * 1984-08-22 1986-03-14 Nec Corp Semiconductor device
JPS61170060A (en) * 1985-01-23 1986-07-31 Mitsubishi Electric Corp Semiconductor memory
JPS63246866A (en) * 1987-04-01 1988-10-13 Mitsubishi Electric Corp Manufacture of one-transistor type dynamic memory cell
US5594698A (en) * 1993-03-17 1997-01-14 Zycad Corporation Random access memory (RAM) based configurable arrays

Also Published As

Publication number Publication date
JPH0131308B2 (en) 1989-06-26

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