JPS5779660A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5779660A
JPS5779660A JP55156084A JP15608480A JPS5779660A JP S5779660 A JPS5779660 A JP S5779660A JP 55156084 A JP55156084 A JP 55156084A JP 15608480 A JP15608480 A JP 15608480A JP S5779660 A JPS5779660 A JP S5779660A
Authority
JP
Japan
Prior art keywords
layer
region
diffusion
poly
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156084A
Other languages
Japanese (ja)
Inventor
Takayuki Matsukawa
Kyohiko Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55156084A priority Critical patent/JPS5779660A/en
Publication of JPS5779660A publication Critical patent/JPS5779660A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To reduce the area of a memory cell, by longitudinally and cubicly constituting a capacitor between a separation layer formed on a 1st conductor substrate and a 2nd conductor epitaxial region diffused below, and a diffusion layer connected to a transfer gate and a bit line. CONSTITUTION:An N<+> diffusion region 8 for a memory capacity is formed to extend as far as beneath a separation oxide film 2 on a P type semiconductor substrate 1. A P type region 9 and N<+> diffusion layer 10 are formed by epitaxial growth on the region 8. A poly-silicon layer for a transfer gate is connected to the layer 9 via a dielectric thin film 7. The P-N junction capacitance between the N<+> region 8 of a large area and the substrate acts as capacitor. This partial charge is controlled by an FET which holds the P type layer 9 and the poly- silicon layer 5 with the thin film layer 7. The N<+> layer 10 is connected to a bit line. This reduces a cell area and makes high-dense.
JP55156084A 1980-11-05 1980-11-05 Semiconductor memory device Pending JPS5779660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156084A JPS5779660A (en) 1980-11-05 1980-11-05 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156084A JPS5779660A (en) 1980-11-05 1980-11-05 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5779660A true JPS5779660A (en) 1982-05-18

Family

ID=15619943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156084A Pending JPS5779660A (en) 1980-11-05 1980-11-05 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5779660A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098111A2 (en) * 1982-06-24 1984-01-11 Harris Semiconductor Patents, Inc. Vertical IGFET device and method for fabricating same
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098111A2 (en) * 1982-06-24 1984-01-11 Harris Semiconductor Patents, Inc. Vertical IGFET device and method for fabricating same
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device

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