JPS57103350A - Manufacture of semiconductor memory - Google Patents

Manufacture of semiconductor memory

Info

Publication number
JPS57103350A
JPS57103350A JP55180896A JP18089680A JPS57103350A JP S57103350 A JPS57103350 A JP S57103350A JP 55180896 A JP55180896 A JP 55180896A JP 18089680 A JP18089680 A JP 18089680A JP S57103350 A JPS57103350 A JP S57103350A
Authority
JP
Japan
Prior art keywords
region
gate
layer
type
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55180896A
Other languages
Japanese (ja)
Inventor
Kouji Harada
Hideaki Itakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55180896A priority Critical patent/JPS57103350A/en
Publication of JPS57103350A publication Critical patent/JPS57103350A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the density of a dynamic MOS memory by selectively growing one conductive type layer on two conductive type region formed on one conductive type substrate and forming a gate insulating film on the side face of the grown layer, thereby forming steroscopic cell structure. CONSTITUTION:An n type region 11 is, for example, formed in a p type substrate 1, the overall surface is thickly oxidized, the oxidized film 12' is partly removed, and a hole 14 is formed. A p type region 15 is, for example, selectively epitaxially grown in the hole 14, an impurity is introduced to the surface to form an n type layer 16. Then, an oxidized film 12' is etched to expose the n type region 13, a gate oxidized film 17 is formed, and gate metallic layer 18 such as polysilicon is accumulated. Then, the gate metal is patterned, and aluminum wires 20, 21 are connected via a PSG film 19. Thus, the side face of the region 15 is used as channel to form a steroscopic memory cell formed of an FET and charge storage capacity with p-n junction between the region 13 and the substrate 1 in high density.
JP55180896A 1980-12-18 1980-12-18 Manufacture of semiconductor memory Pending JPS57103350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55180896A JPS57103350A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55180896A JPS57103350A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor memory

Publications (1)

Publication Number Publication Date
JPS57103350A true JPS57103350A (en) 1982-06-26

Family

ID=16091209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55180896A Pending JPS57103350A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57103350A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919366A (en) * 1982-07-23 1984-01-31 Hitachi Ltd Semiconductor memory device
JPS59182558A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Semiconductor memory device
JPS61294854A (en) * 1985-06-22 1986-12-25 Toshiba Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919366A (en) * 1982-07-23 1984-01-31 Hitachi Ltd Semiconductor memory device
JPH0345550B2 (en) * 1982-07-23 1991-07-11 Hitachi Ltd
JPS59182558A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Semiconductor memory device
JPS61294854A (en) * 1985-06-22 1986-12-25 Toshiba Corp Semiconductor device

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