JPS55118665A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55118665A
JPS55118665A JP2635379A JP2635379A JPS55118665A JP S55118665 A JPS55118665 A JP S55118665A JP 2635379 A JP2635379 A JP 2635379A JP 2635379 A JP2635379 A JP 2635379A JP S55118665 A JPS55118665 A JP S55118665A
Authority
JP
Japan
Prior art keywords
region
collector
approx
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2635379A
Other languages
Japanese (ja)
Other versions
JPS6346582B2 (en
Inventor
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2635379A priority Critical patent/JPS55118665A/en
Publication of JPS55118665A publication Critical patent/JPS55118665A/en
Publication of JPS6346582B2 publication Critical patent/JPS6346582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To provide a superhigh speed logic element which has lower junction capacity between a connector and a substrate, and base and collector junction capacity, with high cut-off frequency by providing a buried collector region directly only under an active region of a transistor. CONSTITUTION:An n<+> buried collector region 2a is formed only directly under the region of a transistor. A lead collector region 15 is formed in a polycrystalline silicon, and annealed to have stepwisely high density distribution elevationally. There are formed a base 6 for a transistor in an epitaxial layer 3a and a non-active base region 7a in a polycrystal region. Thus, there is reduced a collector resistance to approx. 1/2, a collector and substrate junction capacity to approx. 1/3 and a base and collector junction capacity to approx. 1/2 as compared with the conventional transistor. Accordingly, there is reduced a cut-off frequency to 5/12 as compared with the conventional one, and a propagation delay speed to approx. 20%. Therefore, there can be provided a superhigh logic element having hihg performance.
JP2635379A 1979-03-06 1979-03-06 Semiconductor device Granted JPS55118665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2635379A JPS55118665A (en) 1979-03-06 1979-03-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2635379A JPS55118665A (en) 1979-03-06 1979-03-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55118665A true JPS55118665A (en) 1980-09-11
JPS6346582B2 JPS6346582B2 (en) 1988-09-16

Family

ID=12191098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2635379A Granted JPS55118665A (en) 1979-03-06 1979-03-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55118665A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130138A (en) * 1979-03-29 1980-10-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing method
JPS55151350A (en) * 1979-05-16 1980-11-25 Mitsubishi Electric Corp Semiconductor device and fabricating method of the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029184A (en) * 1973-07-17 1975-03-25
JPS52119874A (en) * 1976-04-02 1977-10-07 Hitachi Ltd Semi-conductor device
JPS5493366A (en) * 1977-12-30 1979-07-24 Nippon Telegr & Teleph Corp <Ntt> Bipolar type transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029184A (en) * 1973-07-17 1975-03-25
JPS52119874A (en) * 1976-04-02 1977-10-07 Hitachi Ltd Semi-conductor device
JPS5493366A (en) * 1977-12-30 1979-07-24 Nippon Telegr & Teleph Corp <Ntt> Bipolar type transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55130138A (en) * 1979-03-29 1980-10-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing method
JPS55151350A (en) * 1979-05-16 1980-11-25 Mitsubishi Electric Corp Semiconductor device and fabricating method of the same

Also Published As

Publication number Publication date
JPS6346582B2 (en) 1988-09-16

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