JPS57164562A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57164562A
JPS57164562A JP57040552A JP4055282A JPS57164562A JP S57164562 A JPS57164562 A JP S57164562A JP 57040552 A JP57040552 A JP 57040552A JP 4055282 A JP4055282 A JP 4055282A JP S57164562 A JPS57164562 A JP S57164562A
Authority
JP
Japan
Prior art keywords
region
type
transistor
pnp
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57040552A
Other languages
Japanese (ja)
Other versions
JPH0235470B2 (en
Inventor
Hiroshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57040552A priority Critical patent/JPS57164562A/en
Publication of JPS57164562A publication Critical patent/JPS57164562A/en
Publication of JPH0235470B2 publication Critical patent/JPH0235470B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Abstract

PURPOSE:To reduce collector resistance and increase dielectric strength of a complementary semiconductor element which contains a longitudinal direction type PNP element and NPN element by determining the depth of each element region of the PNP element and the depth of each element region of the NPN element independently. CONSTITUTION:N type regions 2 and 9 are formed on a P type substrate 1. The region 2 becomes a buried layer for reducing collector resistance of an NPN transistor and the region 9 becomes a buried layer for separating a collector region 10 of a PNP transistor and the substrate 1 electrically. Moreover, P type high impurity density regions 3 and 10 are formed on the P type substrate 1 and the region 9. Then an N type vapor growth layer 4 is formed and P type regions 6, 12 and 5 are formed by impurity diffusion from the surface. With this constitution, the depths of respective element regions of the PNP transistor 27 and the NPN transistor 28 can be determined independently, so that each transistor can be composed by the optimum condition.
JP57040552A 1982-03-15 1982-03-15 Semiconductor device Granted JPS57164562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57040552A JPS57164562A (en) 1982-03-15 1982-03-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57040552A JPS57164562A (en) 1982-03-15 1982-03-15 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP4311172A Division JPS5739059B2 (en) 1972-04-28 1972-04-28

Publications (2)

Publication Number Publication Date
JPS57164562A true JPS57164562A (en) 1982-10-09
JPH0235470B2 JPH0235470B2 (en) 1990-08-10

Family

ID=12583609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57040552A Granted JPS57164562A (en) 1982-03-15 1982-03-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57164562A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632379A (en) * 1986-06-20 1988-01-07 Sanyo Electric Co Ltd Manufacture of vertical type pnp transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495281A (en) * 1972-04-28 1974-01-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495281A (en) * 1972-04-28 1974-01-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS632379A (en) * 1986-06-20 1988-01-07 Sanyo Electric Co Ltd Manufacture of vertical type pnp transistor

Also Published As

Publication number Publication date
JPH0235470B2 (en) 1990-08-10

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