JPS5780755A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5780755A
JPS5780755A JP15744180A JP15744180A JPS5780755A JP S5780755 A JPS5780755 A JP S5780755A JP 15744180 A JP15744180 A JP 15744180A JP 15744180 A JP15744180 A JP 15744180A JP S5780755 A JPS5780755 A JP S5780755A
Authority
JP
Japan
Prior art keywords
region
regions
type
forming
supplying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15744180A
Other languages
Japanese (ja)
Inventor
Yasutaka Horiba
Shuhei Iwade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15744180A priority Critical patent/JPS5780755A/en
Publication of JPS5780755A publication Critical patent/JPS5780755A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To simplify the steps of manufacturing a semiconductor device by forming a diffused region of high impurity density simultaneously upon formation of a region of a circuit element in an epitaxial layer formed on a semiconductor substrate, and forming metallic electrodes for supplying substrate potential to the region. CONSTITUTION:After N<+> type collector buried regions 21, 31 are formed on a P type semiconductor substrate 1, an N<-> epitaxial layer 10 is grown on the overall surface, dielectric regions 41-44 are formed from the main surface side, and transistors 2, 3 are isolated therebetween. The, P type base regions 23, 33 are formed in the isolated N<-> type collector regions 22, 23, N<+> type region 7 is simultaneously diffused from the main surface side in the N<+> type emitter regions 24, 34 and N<+> type collector regions 25, 35. Then, metallic electrode 7 for supplying substrate potential to the region 7. In this manner it is not necessary to separately add the step of forming the diffused region for supplying the substrate potential, thereby simplifying the steps.
JP15744180A 1980-11-07 1980-11-07 Semiconductor device Pending JPS5780755A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15744180A JPS5780755A (en) 1980-11-07 1980-11-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15744180A JPS5780755A (en) 1980-11-07 1980-11-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5780755A true JPS5780755A (en) 1982-05-20

Family

ID=15649712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15744180A Pending JPS5780755A (en) 1980-11-07 1980-11-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5780755A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0216435A2 (en) * 1985-09-25 1987-04-01 Advanced Micro Devices, Inc. Bipolar integrated circuit having an improved isolation and substrate connection, and method of preparing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056183A (en) * 1973-09-14 1975-05-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056183A (en) * 1973-09-14 1975-05-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0216435A2 (en) * 1985-09-25 1987-04-01 Advanced Micro Devices, Inc. Bipolar integrated circuit having an improved isolation and substrate connection, and method of preparing the same

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