JPS5443683A - Production of transistor - Google Patents

Production of transistor

Info

Publication number
JPS5443683A
JPS5443683A JP10988177A JP10988177A JPS5443683A JP S5443683 A JPS5443683 A JP S5443683A JP 10988177 A JP10988177 A JP 10988177A JP 10988177 A JP10988177 A JP 10988177A JP S5443683 A JPS5443683 A JP S5443683A
Authority
JP
Japan
Prior art keywords
area
type
film
base
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10988177A
Other languages
Japanese (ja)
Inventor
Akio Anzai
Tadao Kachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10988177A priority Critical patent/JPS5443683A/en
Publication of JPS5443683A publication Critical patent/JPS5443683A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To self-align the emitter and base areas to improve production yield and reduce the base extending resistance to improve high frequency characteristic by forming simultaneously the impurity leading open hole for emitter formation and the impurity leading open hold for base formation.
CONSTITUTION: N+ type buried area 16 is provided on P type Si substrate 12, and N type layer 14 is grown epitaxially throughout the surface, and layer 14 is covered with SiO2 film 18 and Si3N4 film 20. Next, open hole 20a is provided in film 20 on a prescribed area and is subjected to selective oxidation to form SiO2 isolated area 22 which reaches substrate 12, and N type insular area 14A is generated on area 16. After that, P type impurity ions are implanted to form P type active base area 26 on the surface of area 14A, and Si3N4 film 28 is caused to adhere onto film 18. Then, open holes 30 and 34 for base and open hole 32 for emitter are simultaneously formed by etching. Next, P+ type base areas 40 and 42 are formed in area 14A by diffusion by using open holes 30 and 34, and N+ type emitter area 50 is formed in area 26 surrounded by them by diffusion by using open hole 32.
COPYRIGHT: (C)1979,JPO&Japio
JP10988177A 1977-09-14 1977-09-14 Production of transistor Pending JPS5443683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10988177A JPS5443683A (en) 1977-09-14 1977-09-14 Production of transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10988177A JPS5443683A (en) 1977-09-14 1977-09-14 Production of transistor

Publications (1)

Publication Number Publication Date
JPS5443683A true JPS5443683A (en) 1979-04-06

Family

ID=14521523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10988177A Pending JPS5443683A (en) 1977-09-14 1977-09-14 Production of transistor

Country Status (1)

Country Link
JP (1) JPS5443683A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037775A (en) * 1983-07-05 1985-02-27 フエアチアイルド　カメラ　アンド　インストルメント　コーポレーシヨン Production of wafer by injection through protective layer
JPH02194533A (en) * 1989-01-23 1990-08-01 Rohm Co Ltd Manufacture of semiconductor device
JPH05275439A (en) * 1992-01-31 1993-10-22 Internatl Business Mach Corp <Ibm> Bipolar transistor having low external base resistance and noise

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037775A (en) * 1983-07-05 1985-02-27 フエアチアイルド　カメラ　アンド　インストルメント　コーポレーシヨン Production of wafer by injection through protective layer
JPH02194533A (en) * 1989-01-23 1990-08-01 Rohm Co Ltd Manufacture of semiconductor device
JPH05275439A (en) * 1992-01-31 1993-10-22 Internatl Business Mach Corp <Ibm> Bipolar transistor having low external base resistance and noise

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