JPS5459886A - Production of bipolar semiconductor device - Google Patents
Production of bipolar semiconductor deviceInfo
- Publication number
- JPS5459886A JPS5459886A JP12664077A JP12664077A JPS5459886A JP S5459886 A JPS5459886 A JP S5459886A JP 12664077 A JP12664077 A JP 12664077A JP 12664077 A JP12664077 A JP 12664077A JP S5459886 A JPS5459886 A JP S5459886A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- collector
- base
- becomes
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To make possible making base layer sufficiently thin in thickness and increase gain band width by epitaxially growing the base layer and collector layer continuously on a semiconductor substrate which becomes emitter.
CONSTITUTION: A P type layer 2 which becomes base is epitaxially grown on an N+ type Si substrate 1 which becomes emitter and an N- type layer 3 which becomes collector is epitaxially grown continuously thereon. Next, the layers 2 and 3 are formed to mesa form by photolithography and further notches 3a are formed in the layer 3, exposing part of the layer 2. Thereafter, the entire surface is covered with a SiO2 film 4 and is etched with contact holes for collector and base electrodes, where a collector electrode 7 and base electrode 8 are respectively mounted. An emitter electrode 9 is formed on the back of the substrate 1. In this way, gain band width is increased
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12664077A JPS5459886A (en) | 1977-10-21 | 1977-10-21 | Production of bipolar semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12664077A JPS5459886A (en) | 1977-10-21 | 1977-10-21 | Production of bipolar semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5459886A true JPS5459886A (en) | 1979-05-14 |
Family
ID=14940194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12664077A Pending JPS5459886A (en) | 1977-10-21 | 1977-10-21 | Production of bipolar semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5459886A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63188970A (en) * | 1987-01-30 | 1988-08-04 | Nippon Telegr & Teleph Corp <Ntt> | Bipolar transistor |
-
1977
- 1977-10-21 JP JP12664077A patent/JPS5459886A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63188970A (en) * | 1987-01-30 | 1988-08-04 | Nippon Telegr & Teleph Corp <Ntt> | Bipolar transistor |
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