JPS5459886A - Production of bipolar semiconductor device - Google Patents

Production of bipolar semiconductor device

Info

Publication number
JPS5459886A
JPS5459886A JP12664077A JP12664077A JPS5459886A JP S5459886 A JPS5459886 A JP S5459886A JP 12664077 A JP12664077 A JP 12664077A JP 12664077 A JP12664077 A JP 12664077A JP S5459886 A JPS5459886 A JP S5459886A
Authority
JP
Japan
Prior art keywords
layer
collector
base
becomes
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12664077A
Other languages
Japanese (ja)
Inventor
Fukunobu Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12664077A priority Critical patent/JPS5459886A/en
Publication of JPS5459886A publication Critical patent/JPS5459886A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make possible making base layer sufficiently thin in thickness and increase gain band width by epitaxially growing the base layer and collector layer continuously on a semiconductor substrate which becomes emitter.
CONSTITUTION: A P type layer 2 which becomes base is epitaxially grown on an N+ type Si substrate 1 which becomes emitter and an N- type layer 3 which becomes collector is epitaxially grown continuously thereon. Next, the layers 2 and 3 are formed to mesa form by photolithography and further notches 3a are formed in the layer 3, exposing part of the layer 2. Thereafter, the entire surface is covered with a SiO2 film 4 and is etched with contact holes for collector and base electrodes, where a collector electrode 7 and base electrode 8 are respectively mounted. An emitter electrode 9 is formed on the back of the substrate 1. In this way, gain band width is increased
COPYRIGHT: (C)1979,JPO&Japio
JP12664077A 1977-10-21 1977-10-21 Production of bipolar semiconductor device Pending JPS5459886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12664077A JPS5459886A (en) 1977-10-21 1977-10-21 Production of bipolar semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12664077A JPS5459886A (en) 1977-10-21 1977-10-21 Production of bipolar semiconductor device

Publications (1)

Publication Number Publication Date
JPS5459886A true JPS5459886A (en) 1979-05-14

Family

ID=14940194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12664077A Pending JPS5459886A (en) 1977-10-21 1977-10-21 Production of bipolar semiconductor device

Country Status (1)

Country Link
JP (1) JPS5459886A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188970A (en) * 1987-01-30 1988-08-04 Nippon Telegr & Teleph Corp <Ntt> Bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188970A (en) * 1987-01-30 1988-08-04 Nippon Telegr & Teleph Corp <Ntt> Bipolar transistor

Similar Documents

Publication Publication Date Title
JPS5636143A (en) Manufacture of semiconductor device
JPS57176772A (en) Semiconductor device and manufacture thereof
JPS54158880A (en) Compound semiconductor device and its manufacture
JPS5683063A (en) Manufacture of semiconductor device
JPS5459886A (en) Production of bipolar semiconductor device
JPS5382275A (en) Production of semiconductor device
JPS572519A (en) Manufacture of semiconductor device
JPS5443683A (en) Production of transistor
JPS57155772A (en) Manufacture of semiconductor device
JPS55153325A (en) Manufacture of semiconductor device
JPS5570063A (en) Transistor and its preparation
JPS5787170A (en) Semiconductor device
JPS54138368A (en) Manufacture for semiconductor device
JPS5617054A (en) Manufacture of semiconductor device
JPS5541787A (en) Semiconductor device
JPS5578568A (en) Manufacture of semiconductor device
JPS57143862A (en) Manufacture of semiconductor integrated circuit
JPS5375871A (en) Procuction of semiconductor device
JPS5627974A (en) Manufacture of compound semiconductor device
JPS5658258A (en) Semiconductor integrated circuit
JPS6442860A (en) Manufacture of lateral bipolar transistor
JPS6430264A (en) Manufacture of semiconductor device
JPS5645072A (en) Transistor
JPS56157069A (en) Manufacture of schottky diode
JPS5575234A (en) Semiconductor device