JPS57143862A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS57143862A JPS57143862A JP56028231A JP2823181A JPS57143862A JP S57143862 A JPS57143862 A JP S57143862A JP 56028231 A JP56028231 A JP 56028231A JP 2823181 A JP2823181 A JP 2823181A JP S57143862 A JPS57143862 A JP S57143862A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystal
- shaped
- film
- base
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- 239000011733 molybdenum Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To obtain collector and base regions in self-alignment shapes by over- etching a polycrystal Si layer on a semiconductor substrate while using an insulating film pattern as a mask and diffusing an impurity to a semiconductor region just under the overhang of the insulating film. CONSTITUTION:The polycrystal Si layer 108 is deposited onto the surface of the semiconductor substrate to which the base region, an injector 107 and an oxide film 104 form isolating elements are shaped through a normal method. The polycrystal Si 108 is over-etched by using the masks consisting of SiO2 films 112 (1121, 1122) and Si3N4 films 111 (1111, 1112), and changed into a polycrystal pattern 113. A thin oxide film 114 is grown on the surface of the semiconductor and the surface of the polycrystal, and a molybdenum film 115 is evaporated onto the whole surface. Boron is diffused using the molybdenum film 115 as a mask, and P<+> type diffusion layers are shaped to the base region 106 just under the overhang. Lastly, the molybdenum film 115 is removed, base contact holes are formed, and P<+> external base regions 120 are shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028231A JPS57143862A (en) | 1981-02-27 | 1981-02-27 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028231A JPS57143862A (en) | 1981-02-27 | 1981-02-27 | Manufacture of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143862A true JPS57143862A (en) | 1982-09-06 |
| JPS6232628B2 JPS6232628B2 (en) | 1987-07-15 |
Family
ID=12242817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56028231A Granted JPS57143862A (en) | 1981-02-27 | 1981-02-27 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143862A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0213320U (en) * | 1988-07-08 | 1990-01-26 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567466A (en) * | 1979-06-29 | 1981-01-26 | Ibm | Selffalignment semiconductor device |
-
1981
- 1981-02-27 JP JP56028231A patent/JPS57143862A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567466A (en) * | 1979-06-29 | 1981-01-26 | Ibm | Selffalignment semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6232628B2 (en) | 1987-07-15 |
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