JPS54138368A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54138368A JPS54138368A JP4626478A JP4626478A JPS54138368A JP S54138368 A JPS54138368 A JP S54138368A JP 4626478 A JP4626478 A JP 4626478A JP 4626478 A JP4626478 A JP 4626478A JP S54138368 A JPS54138368 A JP S54138368A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffusion
- layer
- mask
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To make small the semiconductor device in size, to obtain high performance and to increase the manufacturing yield, by determining the relation of position on the flat plane between the diffusion regions with the first mask through the use of the impurity diffusion mask of two layer construction and performing diffusion with the second mask.
CONSTITUTION: On the P type Si substrate 1 provided with the implanting layer 2, the N type layer 2 is epitaxially grown, and it is covered with the two layer construction diffusion mask with the SiO2 film 4 and the Si3N4 film 5. Further, on it, the resist mask 6 providing each region is provided, and the film 4 of each region is exposed by etching. After that, the mask 6 is renewed by etching and the specified region of the layer 3 is exposed, and the P type isolation region 7 is formed by diffusion in the layer 3. Further, the SiO2 film produced is patterned and the P type base region 8 and the resistor region 9 are formed by diffusion in the layer 3, and the N type collector contact region 10 is formed by diffusion with patterning again to provide the N type emitter region 11 in the region 8.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4626478A JPS54138368A (en) | 1978-04-19 | 1978-04-19 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4626478A JPS54138368A (en) | 1978-04-19 | 1978-04-19 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54138368A true JPS54138368A (en) | 1979-10-26 |
Family
ID=12742342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4626478A Pending JPS54138368A (en) | 1978-04-19 | 1978-04-19 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54138368A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5759319A (en) * | 1980-09-29 | 1982-04-09 | Hitachi Ltd | Manufacture of semiconductor device |
-
1978
- 1978-04-19 JP JP4626478A patent/JPS54138368A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5759319A (en) * | 1980-09-29 | 1982-04-09 | Hitachi Ltd | Manufacture of semiconductor device |
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