JPS5627974A - Manufacture of compound semiconductor device - Google Patents

Manufacture of compound semiconductor device

Info

Publication number
JPS5627974A
JPS5627974A JP10397779A JP10397779A JPS5627974A JP S5627974 A JPS5627974 A JP S5627974A JP 10397779 A JP10397779 A JP 10397779A JP 10397779 A JP10397779 A JP 10397779A JP S5627974 A JPS5627974 A JP S5627974A
Authority
JP
Japan
Prior art keywords
resist mask
type
semiconductor device
compound semiconductor
thereafter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10397779A
Other languages
Japanese (ja)
Inventor
Yasuhiro Ishii
Noriyuki Shimano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP10397779A priority Critical patent/JPS5627974A/en
Publication of JPS5627974A publication Critical patent/JPS5627974A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To secure high manufacturing yield, uniform performance and mass productivity of the compound semiconductor device by precisely defining one type of resist mask in a step when setting the relative position relationship of essential components. CONSTITUTION:An insulating film 12 is coated on the surface of a semi-insulating GaAs substrate 11, and an N type active layer 14 is formed thereon. Then, an insulating film 15 is formed thereon, a resist mask 16 is formed thereon, and openings are perforated at the film 15. Thereafter, N<+> type layers 18 and 19 of source and drain electrode regions are formed thereon. Subsequently, a selectively diffused P<+> type layer 21 of a gate electrode region is formed using a resist mask 20. Then, a resist mask 22 is formed thereon, and evaporation and lift-off are conducted to form ohmic electrode metallic layers 23 and 24 thereon. Thereafter, a resist mask 25 is formed thereon, and a diffused junction P<+> type gate electrode 26, source and drain wires 27 and 28 are formed thereon. Finally, the resist mask 25 is removed therefrom.
JP10397779A 1979-08-17 1979-08-17 Manufacture of compound semiconductor device Pending JPS5627974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10397779A JPS5627974A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10397779A JPS5627974A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5627974A true JPS5627974A (en) 1981-03-18

Family

ID=14368376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10397779A Pending JPS5627974A (en) 1979-08-17 1979-08-17 Manufacture of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627974A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253278A (en) * 1984-05-29 1985-12-13 Sony Corp Manufacture of junction type field-effect type semiconductor device
JPS63280416A (en) * 1987-05-12 1988-11-17 Agency Of Ind Science & Technol Manufacture of compound semiconductor integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253278A (en) * 1984-05-29 1985-12-13 Sony Corp Manufacture of junction type field-effect type semiconductor device
JPH0713975B2 (en) * 1984-05-29 1995-02-15 ソニー株式会社 Manufacturing method of junction type field effect semiconductor device
JPS63280416A (en) * 1987-05-12 1988-11-17 Agency Of Ind Science & Technol Manufacture of compound semiconductor integrated circuit
JPH0533815B2 (en) * 1987-05-12 1993-05-20 Kogyo Gijutsuin

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