JPS56142664A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56142664A
JPS56142664A JP4646580A JP4646580A JPS56142664A JP S56142664 A JPS56142664 A JP S56142664A JP 4646580 A JP4646580 A JP 4646580A JP 4646580 A JP4646580 A JP 4646580A JP S56142664 A JPS56142664 A JP S56142664A
Authority
JP
Japan
Prior art keywords
layer
sbd
electrode window
mask
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4646580A
Other languages
Japanese (ja)
Inventor
Hiroshi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4646580A priority Critical patent/JPS56142664A/en
Publication of JPS56142664A publication Critical patent/JPS56142664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a Schottky barrier diode (SBD) and a transistor with simple steps by simultaneously forming emitter electrode window, base electrode window and SBD electrode window at an SiO2 mask, and then employing a photomask and ion implantation. CONSTITUTION:A P type base layer 2 is formed in a collector layer 1 made of N type Si epitaxial layer. Then, an SiO2 film 3 is formed, and a Schottky barrier diode (SBD) window 4, an emitter electrode window 5, and a base electrode window 6 are formed by photoetching. Thereafter, a mask is formed of a resist layer 7, and a nondoped polysilicon layer 8 is formed at low temperature. Subsequently, with the second photoresist layer 7' as a mask N type impurity is ion injected to form an emitter 10. Then, the photoresist layer is removed, a metallic layer is covered thereon, patterned, and an SBD and the respective electrodes are formed.
JP4646580A 1980-04-09 1980-04-09 Manufacture of semiconductor device Pending JPS56142664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4646580A JPS56142664A (en) 1980-04-09 1980-04-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4646580A JPS56142664A (en) 1980-04-09 1980-04-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56142664A true JPS56142664A (en) 1981-11-07

Family

ID=12747913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4646580A Pending JPS56142664A (en) 1980-04-09 1980-04-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56142664A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (en) * 1982-10-22 1984-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6221261A (en) * 1985-07-16 1987-01-29 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Driving element
JPH03102065A (en) * 1989-09-14 1991-04-26 Ricoh Co Ltd Sheet after-treatment device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (en) * 1982-10-22 1984-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPH035058B2 (en) * 1982-10-22 1991-01-24 Fujitsu Ltd
JPS6221261A (en) * 1985-07-16 1987-01-29 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Driving element
JPH03102065A (en) * 1989-09-14 1991-04-26 Ricoh Co Ltd Sheet after-treatment device

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