JPS5737882A - Compound semiconductor device and production thereof - Google Patents

Compound semiconductor device and production thereof

Info

Publication number
JPS5737882A
JPS5737882A JP11343680A JP11343680A JPS5737882A JP S5737882 A JPS5737882 A JP S5737882A JP 11343680 A JP11343680 A JP 11343680A JP 11343680 A JP11343680 A JP 11343680A JP S5737882 A JPS5737882 A JP S5737882A
Authority
JP
Japan
Prior art keywords
resist mask
region
ion
junction
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11343680A
Other languages
Japanese (ja)
Inventor
Kiyoo Kamei
Mikio Tatematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11343680A priority Critical patent/JPS5737882A/en
Publication of JPS5737882A publication Critical patent/JPS5737882A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV

Abstract

PURPOSE:To prevent breakdown of an FET by making the n layer of a pnp junction equal in the carrier concentration to the source layer of MESFET near which a pnp junction region is provided. CONSTITUTION:Si ion is selectively implanted into a channel region 4 employing a resist mask on a half-insulating substrate 1 doped with Cr. Subsequently, with a resist mask applied again, Si ion is implanted into a source 2, a drain 3 and the region 5 at a high concentration. Then, with a resist mask, Mg ion implanted to make p layers 61 and 62. The resist mask is removed and after an annealing in an As atmosphere, ohmic electrodes 7, 9, 101 and 102 and a gate electrode 8 on the channel are attached. When a connection is made as specified, the junction region 656 yields before the breakdown of the Schottkey junction thereby preventing the breakdown of the FET. This enables simultaneous formation an N layer 5 of the junction region 656 with the source thereby simplifying the production process.
JP11343680A 1980-08-20 1980-08-20 Compound semiconductor device and production thereof Pending JPS5737882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11343680A JPS5737882A (en) 1980-08-20 1980-08-20 Compound semiconductor device and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11343680A JPS5737882A (en) 1980-08-20 1980-08-20 Compound semiconductor device and production thereof

Publications (1)

Publication Number Publication Date
JPS5737882A true JPS5737882A (en) 1982-03-02

Family

ID=14612167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11343680A Pending JPS5737882A (en) 1980-08-20 1980-08-20 Compound semiconductor device and production thereof

Country Status (1)

Country Link
JP (1) JPS5737882A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114755A (en) * 1984-11-09 1986-06-02 株式会社御池鐵工所 Compression and heating type grinder
US5143857A (en) * 1988-11-07 1992-09-01 Triquint Semiconductor, Inc. Method of fabricating an electronic device with reduced susceptiblity to backgating effects

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348487A (en) * 1976-10-14 1978-05-01 Fujitsu Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61114755A (en) * 1984-11-09 1986-06-02 株式会社御池鐵工所 Compression and heating type grinder
JPH0148821B2 (en) * 1984-11-09 1989-10-20 Miike Tetsukosho Kk
US5143857A (en) * 1988-11-07 1992-09-01 Triquint Semiconductor, Inc. Method of fabricating an electronic device with reduced susceptiblity to backgating effects

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