JPS56134762A - Manufacturing of bipolar semiconductor device - Google Patents

Manufacturing of bipolar semiconductor device

Info

Publication number
JPS56134762A
JPS56134762A JP3802980A JP3802980A JPS56134762A JP S56134762 A JPS56134762 A JP S56134762A JP 3802980 A JP3802980 A JP 3802980A JP 3802980 A JP3802980 A JP 3802980A JP S56134762 A JPS56134762 A JP S56134762A
Authority
JP
Japan
Prior art keywords
layer
emitter
sio2
type
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3802980A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Shinada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP3802980A priority Critical patent/JPS56134762A/en
Publication of JPS56134762A publication Critical patent/JPS56134762A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To provide a bipolar device having a high speed operation by a method wherein some ions with a desired volume of dose are implanted at a portion of the base layer through some fine holes and a thermal dispersion caused by a film containing some impurities is also applied therealong. CONSTITUTION:n<+> Implanting layer 2 is formed in p type Si base plate 1, and n type epitaxial layer 3 is separated by SiO2 layer 5. They are covered by SiO2 film 6, some ions are implanted through a resist mask, and p type inner base 7 and p<+> type outer base 8 are arranged at n type layer 3. Then, openings 91, 92 with extra fine width are made in SiO2 6, some ions are implanted through mask 6 so as to form n<+> emitter 10 and n<+> collector interconnect layer 11. After annealing of them, a doped poly-Si 12 is selectively formed, processed in N2 at 1,000 deg.C to make n<++> layer 13. Then they are covered again by SiO2 6, an opening 14 is selectively made there to form aluminum electrodes 15-17. With this arrangement, even if an emitter opening is extremely fine in its width, hFE is not decreased, a junction area between the emitter and base of the semiconductor may be decreased, the emitter may highly be concentrated to form such a bipolar semiconductor device having a high degree of concentration and a high speed operation.
JP3802980A 1980-03-25 1980-03-25 Manufacturing of bipolar semiconductor device Pending JPS56134762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3802980A JPS56134762A (en) 1980-03-25 1980-03-25 Manufacturing of bipolar semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3802980A JPS56134762A (en) 1980-03-25 1980-03-25 Manufacturing of bipolar semiconductor device

Publications (1)

Publication Number Publication Date
JPS56134762A true JPS56134762A (en) 1981-10-21

Family

ID=12514123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3802980A Pending JPS56134762A (en) 1980-03-25 1980-03-25 Manufacturing of bipolar semiconductor device

Country Status (1)

Country Link
JP (1) JPS56134762A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152665A (en) * 1983-02-21 1984-08-31 Nec Corp Semiconductor device and manufacture thereof
JP2010267923A (en) * 2009-05-18 2010-11-25 Sharp Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123568A (en) * 1975-04-21 1976-10-28 Nec Corp Transistor device
JPS51140489A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of fabricating semiconductor device
JPS53130981A (en) * 1977-04-20 1978-11-15 Nec Corp Manufacture for semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123568A (en) * 1975-04-21 1976-10-28 Nec Corp Transistor device
JPS51140489A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of fabricating semiconductor device
JPS53130981A (en) * 1977-04-20 1978-11-15 Nec Corp Manufacture for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152665A (en) * 1983-02-21 1984-08-31 Nec Corp Semiconductor device and manufacture thereof
JP2010267923A (en) * 2009-05-18 2010-11-25 Sharp Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5691478A (en) Manufacture of punch-through type diode
JPS5587483A (en) Mis type semiconductor device
JPS56134762A (en) Manufacturing of bipolar semiconductor device
JPS5642367A (en) Manufacture of bipolar integrated circuit
JPS5710969A (en) Semiconductor device and manufacture thereof
JPS55108767A (en) Semiconductor device and manufacture of the same
JPS55153344A (en) Manufacture of semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS56134761A (en) Manufacturing of semiconductor device
JPS55132053A (en) Manufacture of semiconductor device
JPS5654063A (en) Semiconductor device
JPS56130971A (en) Manufacture of mos type semiconductor device
JPS6446974A (en) Manufacture of semiconductor device
JPS54154271A (en) Manufacture of semiconductor device
JPS55102269A (en) Method of fabricating semiconductor device
JPS554915A (en) Semi-conductor manufacturing method
JPS5640256A (en) Manufacture of semiconductor device
JPS5710966A (en) Manufacture of semiconductor integrated circuit device
JPS57176764A (en) Manufacture of semiconductor device
JPS5776873A (en) Manufacture of semiconductor device
JPS5759321A (en) Manufacture of semiconductor device
JPS56157043A (en) Manufacture of semiconductor device
JPS564272A (en) Semiconductor device
JPS5685852A (en) Manufacture of bipolar type integrated circuit
JPS55157242A (en) Manufacture of semiconductor device