JPS55108767A - Semiconductor device and manufacture of the same - Google Patents

Semiconductor device and manufacture of the same

Info

Publication number
JPS55108767A
JPS55108767A JP1649079A JP1649079A JPS55108767A JP S55108767 A JPS55108767 A JP S55108767A JP 1649079 A JP1649079 A JP 1649079A JP 1649079 A JP1649079 A JP 1649079A JP S55108767 A JPS55108767 A JP S55108767A
Authority
JP
Japan
Prior art keywords
type
window
layer
photoresist
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1649079A
Other languages
Japanese (ja)
Inventor
Masaaki Ohira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1649079A priority Critical patent/JPS55108767A/en
Publication of JPS55108767A publication Critical patent/JPS55108767A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce the dispersion of direct current amplification factor values for improvement of characteristics by a method wherein a photoresist forming is processed and then an ion implantation of a p-type impurity with the resist as a mask are provided after collector and emitter portions have been formed.
CONSTITUTION: An n-type silicon epitaxial growth layer 2 is grown on an n+-type silicon substrate 1 and a silicon heat oxide film 3 is formed on the layer 2. The film 3 is removed selectively by etching with a photoresist technique to have a diffusion window 10. A p-type impurity diffusion is provided on the window 10 to form a p-type high concentration impurity layer 4. A window 11 determining the base width is made. A p-type ion implantation with a photoresist 5 as a mask is provided to form a p-type low concentration impurity layer 6. The film 5 is removed, oxidation of layers 6 and 4 and the press-in to the specified depth are provided.
COPYRIGHT: (C)1980,JPO&Japio
JP1649079A 1979-02-15 1979-02-15 Semiconductor device and manufacture of the same Pending JPS55108767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1649079A JPS55108767A (en) 1979-02-15 1979-02-15 Semiconductor device and manufacture of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1649079A JPS55108767A (en) 1979-02-15 1979-02-15 Semiconductor device and manufacture of the same

Publications (1)

Publication Number Publication Date
JPS55108767A true JPS55108767A (en) 1980-08-21

Family

ID=11917724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1649079A Pending JPS55108767A (en) 1979-02-15 1979-02-15 Semiconductor device and manufacture of the same

Country Status (1)

Country Link
JP (1) JPS55108767A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662361A (en) * 1979-10-29 1981-05-28 Hitachi Ltd Semiconductor device
JPS57183068A (en) * 1981-04-24 1982-11-11 Nat Semiconductor Corp Integrated circuit lateral transistor
JPS5986259A (en) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Semiconductor device
JPS61216469A (en) * 1985-03-22 1986-09-26 Nec Corp Lateral transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662361A (en) * 1979-10-29 1981-05-28 Hitachi Ltd Semiconductor device
JPS57183068A (en) * 1981-04-24 1982-11-11 Nat Semiconductor Corp Integrated circuit lateral transistor
JPH0330305B2 (en) * 1981-04-24 1991-04-26
JPS5986259A (en) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Semiconductor device
JPS61216469A (en) * 1985-03-22 1986-09-26 Nec Corp Lateral transistor

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