JPS55108767A - Semiconductor device and manufacture of the same - Google Patents
Semiconductor device and manufacture of the sameInfo
- Publication number
- JPS55108767A JPS55108767A JP1649079A JP1649079A JPS55108767A JP S55108767 A JPS55108767 A JP S55108767A JP 1649079 A JP1649079 A JP 1649079A JP 1649079 A JP1649079 A JP 1649079A JP S55108767 A JPS55108767 A JP S55108767A
- Authority
- JP
- Japan
- Prior art keywords
- type
- window
- layer
- photoresist
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To reduce the dispersion of direct current amplification factor values for improvement of characteristics by a method wherein a photoresist forming is processed and then an ion implantation of a p-type impurity with the resist as a mask are provided after collector and emitter portions have been formed.
CONSTITUTION: An n-type silicon epitaxial growth layer 2 is grown on an n+-type silicon substrate 1 and a silicon heat oxide film 3 is formed on the layer 2. The film 3 is removed selectively by etching with a photoresist technique to have a diffusion window 10. A p-type impurity diffusion is provided on the window 10 to form a p-type high concentration impurity layer 4. A window 11 determining the base width is made. A p-type ion implantation with a photoresist 5 as a mask is provided to form a p-type low concentration impurity layer 6. The film 5 is removed, oxidation of layers 6 and 4 and the press-in to the specified depth are provided.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1649079A JPS55108767A (en) | 1979-02-15 | 1979-02-15 | Semiconductor device and manufacture of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1649079A JPS55108767A (en) | 1979-02-15 | 1979-02-15 | Semiconductor device and manufacture of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55108767A true JPS55108767A (en) | 1980-08-21 |
Family
ID=11917724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1649079A Pending JPS55108767A (en) | 1979-02-15 | 1979-02-15 | Semiconductor device and manufacture of the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55108767A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662361A (en) * | 1979-10-29 | 1981-05-28 | Hitachi Ltd | Semiconductor device |
JPS57183068A (en) * | 1981-04-24 | 1982-11-11 | Nat Semiconductor Corp | Integrated circuit lateral transistor |
JPS5986259A (en) * | 1982-11-08 | 1984-05-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS61216469A (en) * | 1985-03-22 | 1986-09-26 | Nec Corp | Lateral transistor |
-
1979
- 1979-02-15 JP JP1649079A patent/JPS55108767A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662361A (en) * | 1979-10-29 | 1981-05-28 | Hitachi Ltd | Semiconductor device |
JPS57183068A (en) * | 1981-04-24 | 1982-11-11 | Nat Semiconductor Corp | Integrated circuit lateral transistor |
JPH0330305B2 (en) * | 1981-04-24 | 1991-04-26 | ||
JPS5986259A (en) * | 1982-11-08 | 1984-05-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS61216469A (en) * | 1985-03-22 | 1986-09-26 | Nec Corp | Lateral transistor |
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