JPS5662361A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5662361A
JPS5662361A JP13878379A JP13878379A JPS5662361A JP S5662361 A JPS5662361 A JP S5662361A JP 13878379 A JP13878379 A JP 13878379A JP 13878379 A JP13878379 A JP 13878379A JP S5662361 A JPS5662361 A JP S5662361A
Authority
JP
Japan
Prior art keywords
dispersion
ion
type
hfe
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13878379A
Other languages
Japanese (ja)
Inventor
Yukinori Kitamura
Sadao Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP13878379A priority Critical patent/JPS5662361A/en
Publication of JPS5662361A publication Critical patent/JPS5662361A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:In a lateral transistor, to improve its reliability by a method wherein an ion immersion layer is added to a highly concentrated area to decrease a dispersion of hFE lower than the case of having only p<+> dispersion layer and thereby a control over the value of hFE. CONSTITUTION:Boron is piled up and dispersed in the surface of n type Si base board 1 to form p type dispersion layers 2 and 3. Then, the oxide film 6 used in a dispersion mask is removed once and then a new oxide film 6' is formed. Then, the mask 7 for use in ion adding operation is formed, ions of boron are added, and thereby p type ion adding layers 4 and 5 with thickness of about 5,000Angstrom are formed. At this time, a space d2 between the layers 4 and 5 is about 5mum. Then, p type dispersion depth caused by an adding of ion is shallow than that of p<+> dispersion, so that a dispersion of effective width is only that of the mask 7. The control for a concentration of the nonpure materials may be facilitated in accordance with the adding condition. Due to this fact, an efficiency of adding the ion is improved and a value of hFE may be increased.
JP13878379A 1979-10-29 1979-10-29 Semiconductor device Pending JPS5662361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13878379A JPS5662361A (en) 1979-10-29 1979-10-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13878379A JPS5662361A (en) 1979-10-29 1979-10-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5662361A true JPS5662361A (en) 1981-05-28

Family

ID=15230094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13878379A Pending JPS5662361A (en) 1979-10-29 1979-10-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5662361A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986259A (en) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Semiconductor device
US4897705A (en) * 1986-05-06 1990-01-30 Mitsubishi Denki Kabushiki Kaisha Lateral bipolar transistor for logic circuit
US5163178A (en) * 1989-12-28 1992-11-10 Sony Corporation Semiconductor device having enhanced impurity concentration profile
US5258644A (en) * 1988-02-24 1993-11-02 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
EP0657944A2 (en) * 1993-12-09 1995-06-14 Nortel Networks Corporation Gate controlled lateral bipolar junction transistor and method of fabrication thereof
JP2008120594A (en) * 2006-11-16 2008-05-29 Medidea Inc Tape holder

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495678A (en) * 1972-05-04 1974-01-18
JPS55108767A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor device and manufacture of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495678A (en) * 1972-05-04 1974-01-18
JPS55108767A (en) * 1979-02-15 1980-08-21 Nec Corp Semiconductor device and manufacture of the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986259A (en) * 1982-11-08 1984-05-18 Mitsubishi Electric Corp Semiconductor device
US4897705A (en) * 1986-05-06 1990-01-30 Mitsubishi Denki Kabushiki Kaisha Lateral bipolar transistor for logic circuit
US5258644A (en) * 1988-02-24 1993-11-02 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
US5163178A (en) * 1989-12-28 1992-11-10 Sony Corporation Semiconductor device having enhanced impurity concentration profile
EP0657944A2 (en) * 1993-12-09 1995-06-14 Nortel Networks Corporation Gate controlled lateral bipolar junction transistor and method of fabrication thereof
JP2008120594A (en) * 2006-11-16 2008-05-29 Medidea Inc Tape holder

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