JPS5671974A - Insulating gate type electric field effect transistor - Google Patents

Insulating gate type electric field effect transistor

Info

Publication number
JPS5671974A
JPS5671974A JP14928479A JP14928479A JPS5671974A JP S5671974 A JPS5671974 A JP S5671974A JP 14928479 A JP14928479 A JP 14928479A JP 14928479 A JP14928479 A JP 14928479A JP S5671974 A JPS5671974 A JP S5671974A
Authority
JP
Japan
Prior art keywords
gate
insulating gate
insulating
electric field
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14928479A
Other languages
Japanese (ja)
Inventor
Jun Tamaoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14928479A priority Critical patent/JPS5671974A/en
Publication of JPS5671974A publication Critical patent/JPS5671974A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enlarge an effective gate area and to make a small packed highly integrated circuit by a method wherein an uneven part is installed to the gate width direction and an insulating gate is constituted along the surface. CONSTITUTION:A resist mask 7 is applied on a face (100) of a Si substrate 1 and an anisotropic etching is performed to form a V groove 2. And then, an insulating film 8a and an Al electrode 3 are laid one upon another to constitute an insulating gate. With this constitution, an IGFET insulating gate for a great magnitude of electric current use which requires a comparatively large gate width can be easily formed within a small gate occupation width W on a limited surface of a substrate. On this account, a transistor having a highly integrated circuit in a small size can be obtained.
JP14928479A 1979-11-16 1979-11-16 Insulating gate type electric field effect transistor Pending JPS5671974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14928479A JPS5671974A (en) 1979-11-16 1979-11-16 Insulating gate type electric field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14928479A JPS5671974A (en) 1979-11-16 1979-11-16 Insulating gate type electric field effect transistor

Publications (1)

Publication Number Publication Date
JPS5671974A true JPS5671974A (en) 1981-06-15

Family

ID=15471827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14928479A Pending JPS5671974A (en) 1979-11-16 1979-11-16 Insulating gate type electric field effect transistor

Country Status (1)

Country Link
JP (1) JPS5671974A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482672A (en) * 1987-09-25 1989-03-28 Toshiba Corp Mos transistor
WO1995028741A1 (en) * 1994-04-19 1995-10-26 Siemens Aktiengesellschaft Micro-electronic component and process for making it
US5675164A (en) * 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
US7391068B2 (en) 2005-06-23 2008-06-24 Kabushiki Kaisha Toshiba Semiconductor device
JP2013042169A (en) * 2004-09-29 2013-02-28 Agere Systems Inc Metal oxide semiconductor device having trench diffusion region and formation method of the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482672A (en) * 1987-09-25 1989-03-28 Toshiba Corp Mos transistor
WO1995028741A1 (en) * 1994-04-19 1995-10-26 Siemens Aktiengesellschaft Micro-electronic component and process for making it
US5828076A (en) * 1994-04-19 1998-10-27 Siemens Aktiengesellschaft Microelectronic component and process for its production
US5675164A (en) * 1995-06-07 1997-10-07 International Business Machines Corporation High performance multi-mesa field effect transistor
JP2013042169A (en) * 2004-09-29 2013-02-28 Agere Systems Inc Metal oxide semiconductor device having trench diffusion region and formation method of the same
US7391068B2 (en) 2005-06-23 2008-06-24 Kabushiki Kaisha Toshiba Semiconductor device

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