JPS5287990A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5287990A
JPS5287990A JP406276A JP406276A JPS5287990A JP S5287990 A JPS5287990 A JP S5287990A JP 406276 A JP406276 A JP 406276A JP 406276 A JP406276 A JP 406276A JP S5287990 A JPS5287990 A JP S5287990A
Authority
JP
Japan
Prior art keywords
region
conductivity type
regions
gate electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP406276A
Other languages
Japanese (ja)
Inventor
Yoshio Nishi
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP406276A priority Critical patent/JPS5287990A/en
Publication of JPS5287990A publication Critical patent/JPS5287990A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/024—Integrated injection logic structures [I2L] using field effect injector structures

Abstract

PURPOSE:An I<2>L wherein the current amplification factor of its lateral transistor is controlled by gate electrode is obtained by providing first and second regions of an opposite conductivity type on a substrate of a - conductivity type, forming at least another one third region of a - conductivity type within the second region, and further providing an input electrode on the surface of the second region and a gate electrode on the substrate surface above the space between the second and third regions by way of an insulator.
JP406276A 1976-01-19 1976-01-19 Semiconductor device Pending JPS5287990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP406276A JPS5287990A (en) 1976-01-19 1976-01-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP406276A JPS5287990A (en) 1976-01-19 1976-01-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5287990A true JPS5287990A (en) 1977-07-22

Family

ID=11574353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP406276A Pending JPS5287990A (en) 1976-01-19 1976-01-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5287990A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159900U (en) * 1979-05-01 1980-11-17
JPS57118664A (en) * 1981-01-16 1982-07-23 Fuji Xerox Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159900U (en) * 1979-05-01 1980-11-17
JPS57118664A (en) * 1981-01-16 1982-07-23 Fuji Xerox Co Ltd Semiconductor device
JPS6230704B2 (en) * 1981-01-16 1987-07-03 Fuji Xerox Co Ltd

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