JPS5425678A - Field effect transistor of ultra high frequency and high output - Google Patents

Field effect transistor of ultra high frequency and high output

Info

Publication number
JPS5425678A
JPS5425678A JP9126677A JP9126677A JPS5425678A JP S5425678 A JPS5425678 A JP S5425678A JP 9126677 A JP9126677 A JP 9126677A JP 9126677 A JP9126677 A JP 9126677A JP S5425678 A JPS5425678 A JP S5425678A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
high frequency
high output
ultra high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9126677A
Other languages
Japanese (ja)
Inventor
Junichi Sone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9126677A priority Critical patent/JPS5425678A/en
Publication of JPS5425678A publication Critical patent/JPS5425678A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase the reliability, by continuing the FET operation even to one finger open wire, through the connection of the gate electrode formed on the semiconductor epitaxial layer to the gate electrode pick up terminals at left and right.
COPYRIGHT: (C)1979,JPO&Japio
JP9126677A 1977-07-28 1977-07-28 Field effect transistor of ultra high frequency and high output Pending JPS5425678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9126677A JPS5425678A (en) 1977-07-28 1977-07-28 Field effect transistor of ultra high frequency and high output

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9126677A JPS5425678A (en) 1977-07-28 1977-07-28 Field effect transistor of ultra high frequency and high output

Publications (1)

Publication Number Publication Date
JPS5425678A true JPS5425678A (en) 1979-02-26

Family

ID=14021615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9126677A Pending JPS5425678A (en) 1977-07-28 1977-07-28 Field effect transistor of ultra high frequency and high output

Country Status (1)

Country Link
JP (1) JPS5425678A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575367A (en) * 1980-06-12 1982-01-12 Mitsubishi Electric Corp Junction type field effect transistor
JPS58190406U (en) * 1982-06-12 1983-12-17 藤原　充弘 Floating material removal device in sedimentation basin
JPS63124568A (en) * 1986-11-14 1988-05-28 Nec Corp Field effect transistor
JPH03232241A (en) * 1989-08-31 1991-10-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575367A (en) * 1980-06-12 1982-01-12 Mitsubishi Electric Corp Junction type field effect transistor
JPS6228594B2 (en) * 1980-06-12 1987-06-22 Mitsubishi Electric Corp
JPS58190406U (en) * 1982-06-12 1983-12-17 藤原　充弘 Floating material removal device in sedimentation basin
JPS63124568A (en) * 1986-11-14 1988-05-28 Nec Corp Field effect transistor
JPH03232241A (en) * 1989-08-31 1991-10-16 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

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