JPS575367A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS575367A
JPS575367A JP8035680A JP8035680A JPS575367A JP S575367 A JPS575367 A JP S575367A JP 8035680 A JP8035680 A JP 8035680A JP 8035680 A JP8035680 A JP 8035680A JP S575367 A JPS575367 A JP S575367A
Authority
JP
Japan
Prior art keywords
electrodes
source
region
drain
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8035680A
Other languages
Japanese (ja)
Other versions
JPS6228594B2 (en
Inventor
Goro Mitarai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8035680A priority Critical patent/JPS575367A/en
Publication of JPS575367A publication Critical patent/JPS575367A/en
Publication of JPS6228594B2 publication Critical patent/JPS6228594B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To decrease the gate series resistance of a field effect transistor by leading vertically source, drain and gate electrodes with respect to the longitudinal direction of the upper gate region of stripe shape, thereby sufficiently increasing the interval between the electrodes. CONSTITUTION:An electrode leading window 8 is opened at the prescribed part of a striped upper gate region 1. Simultaneously, a source and a drain electrode leading windows 4 and 5 are opened at the respective prescribed parts. Since the upper gate region 1, the source region 2 and the drain region 3 are sufficiently long in the longitudinal direction as compared with the width of the stripe at this time, the windows 4, 5, 8 can be widely formed at the intervals among the electrodes. Thereafter, gate, source and drain electrodes 9, 6, 7 respectively are covered to the respective windows.
JP8035680A 1980-06-12 1980-06-12 Junction type field effect transistor Granted JPS575367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8035680A JPS575367A (en) 1980-06-12 1980-06-12 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8035680A JPS575367A (en) 1980-06-12 1980-06-12 Junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS575367A true JPS575367A (en) 1982-01-12
JPS6228594B2 JPS6228594B2 (en) 1987-06-22

Family

ID=13715964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8035680A Granted JPS575367A (en) 1980-06-12 1980-06-12 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS575367A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012043334A1 (en) * 2010-10-01 2012-04-05 シャープ株式会社 Nitride semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6377794U (en) * 1986-11-07 1988-05-23
JP2006261537A (en) * 2005-03-18 2006-09-28 Fuji Electric Holdings Co Ltd Lateral semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425678A (en) * 1977-07-28 1979-02-26 Nec Corp Field effect transistor of ultra high frequency and high output

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425678A (en) * 1977-07-28 1979-02-26 Nec Corp Field effect transistor of ultra high frequency and high output

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012043334A1 (en) * 2010-10-01 2012-04-05 シャープ株式会社 Nitride semiconductor device

Also Published As

Publication number Publication date
JPS6228594B2 (en) 1987-06-22

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