JPS5646556A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5646556A JPS5646556A JP12224979A JP12224979A JPS5646556A JP S5646556 A JPS5646556 A JP S5646556A JP 12224979 A JP12224979 A JP 12224979A JP 12224979 A JP12224979 A JP 12224979A JP S5646556 A JPS5646556 A JP S5646556A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- drain
- source
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 3
- 230000000694 effects Effects 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce the conductance of a field effect transistor by varying a channel width from a source side to a drain side and suppressing the increase in the gate threshold value of the transistor. CONSTITUTION:Channel, source and drain regions of a field effect transistor are defined by the pattern 10 of a gate insulated film, are separated by the gate electrode pattern 102, and a source 103 and a drain 104 are thus formed. The channel is now formed of a series connection of two sections having sizes of W1Xl and W2Xl2. The drain current can be reduce to approx. 65% in case of the channel having 2l1=L and W1=2W2 as compared with the case of the channel having constant W1 according to this configuration. Even if the width W2 is sufficiently decreased, the short channel effect cancels the narrow channel effect in the channel region of the drain side, so that the threshold voltage can be set at the generally same as the source side. Even if the channel width is continuously reduced from the source side, similar effect can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12224979A JPS5646556A (en) | 1979-09-21 | 1979-09-21 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12224979A JPS5646556A (en) | 1979-09-21 | 1979-09-21 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5646556A true JPS5646556A (en) | 1981-04-27 |
Family
ID=14831279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12224979A Pending JPS5646556A (en) | 1979-09-21 | 1979-09-21 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5646556A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047456A (en) * | 1983-08-26 | 1985-03-14 | Mitsubishi Electric Corp | Semiconductor device |
JPS6047457A (en) * | 1983-08-26 | 1985-03-14 | Mitsubishi Electric Corp | Semiconductor device |
JPH04326767A (en) * | 1991-04-26 | 1992-11-16 | Kawasaki Steel Corp | Pass transistor |
JPH08162626A (en) * | 1994-12-07 | 1996-06-21 | Nec Corp | Solid-state image pickup device |
KR100447381B1 (en) * | 1995-11-28 | 2004-10-14 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Mos transistor |
JP2007214398A (en) * | 2006-02-10 | 2007-08-23 | Nec Corp | Semiconductor integrated circuit |
-
1979
- 1979-09-21 JP JP12224979A patent/JPS5646556A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047456A (en) * | 1983-08-26 | 1985-03-14 | Mitsubishi Electric Corp | Semiconductor device |
JPS6047457A (en) * | 1983-08-26 | 1985-03-14 | Mitsubishi Electric Corp | Semiconductor device |
JPH04326767A (en) * | 1991-04-26 | 1992-11-16 | Kawasaki Steel Corp | Pass transistor |
JPH08162626A (en) * | 1994-12-07 | 1996-06-21 | Nec Corp | Solid-state image pickup device |
KR100447381B1 (en) * | 1995-11-28 | 2004-10-14 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Mos transistor |
JP2007214398A (en) * | 2006-02-10 | 2007-08-23 | Nec Corp | Semiconductor integrated circuit |
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