JPS5646556A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5646556A
JPS5646556A JP12224979A JP12224979A JPS5646556A JP S5646556 A JPS5646556 A JP S5646556A JP 12224979 A JP12224979 A JP 12224979A JP 12224979 A JP12224979 A JP 12224979A JP S5646556 A JPS5646556 A JP S5646556A
Authority
JP
Japan
Prior art keywords
channel
drain
source
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12224979A
Other languages
Japanese (ja)
Inventor
Toru Tsujiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12224979A priority Critical patent/JPS5646556A/en
Publication of JPS5646556A publication Critical patent/JPS5646556A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce the conductance of a field effect transistor by varying a channel width from a source side to a drain side and suppressing the increase in the gate threshold value of the transistor. CONSTITUTION:Channel, source and drain regions of a field effect transistor are defined by the pattern 10 of a gate insulated film, are separated by the gate electrode pattern 102, and a source 103 and a drain 104 are thus formed. The channel is now formed of a series connection of two sections having sizes of W1Xl and W2Xl2. The drain current can be reduce to approx. 65% in case of the channel having 2l1=L and W1=2W2 as compared with the case of the channel having constant W1 according to this configuration. Even if the width W2 is sufficiently decreased, the short channel effect cancels the narrow channel effect in the channel region of the drain side, so that the threshold voltage can be set at the generally same as the source side. Even if the channel width is continuously reduced from the source side, similar effect can be obtained.
JP12224979A 1979-09-21 1979-09-21 Field effect transistor Pending JPS5646556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12224979A JPS5646556A (en) 1979-09-21 1979-09-21 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12224979A JPS5646556A (en) 1979-09-21 1979-09-21 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5646556A true JPS5646556A (en) 1981-04-27

Family

ID=14831279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12224979A Pending JPS5646556A (en) 1979-09-21 1979-09-21 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5646556A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047456A (en) * 1983-08-26 1985-03-14 Mitsubishi Electric Corp Semiconductor device
JPS6047457A (en) * 1983-08-26 1985-03-14 Mitsubishi Electric Corp Semiconductor device
JPH04326767A (en) * 1991-04-26 1992-11-16 Kawasaki Steel Corp Pass transistor
JPH08162626A (en) * 1994-12-07 1996-06-21 Nec Corp Solid-state image pickup device
KR100447381B1 (en) * 1995-11-28 2004-10-14 코닌클리케 필립스 일렉트로닉스 엔.브이. Mos transistor
JP2007214398A (en) * 2006-02-10 2007-08-23 Nec Corp Semiconductor integrated circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047456A (en) * 1983-08-26 1985-03-14 Mitsubishi Electric Corp Semiconductor device
JPS6047457A (en) * 1983-08-26 1985-03-14 Mitsubishi Electric Corp Semiconductor device
JPH04326767A (en) * 1991-04-26 1992-11-16 Kawasaki Steel Corp Pass transistor
JPH08162626A (en) * 1994-12-07 1996-06-21 Nec Corp Solid-state image pickup device
KR100447381B1 (en) * 1995-11-28 2004-10-14 코닌클리케 필립스 일렉트로닉스 엔.브이. Mos transistor
JP2007214398A (en) * 2006-02-10 2007-08-23 Nec Corp Semiconductor integrated circuit

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