JPS5615079A - Insulated gate field effect transistor couple - Google Patents

Insulated gate field effect transistor couple

Info

Publication number
JPS5615079A
JPS5615079A JP9078679A JP9078679A JPS5615079A JP S5615079 A JPS5615079 A JP S5615079A JP 9078679 A JP9078679 A JP 9078679A JP 9078679 A JP9078679 A JP 9078679A JP S5615079 A JPS5615079 A JP S5615079A
Authority
JP
Japan
Prior art keywords
misfet
conductors
field effect
unitary
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9078679A
Other languages
Japanese (ja)
Other versions
JPS6148793B2 (en
Inventor
Tamio Murano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9078679A priority Critical patent/JPS5615079A/en
Publication of JPS5615079A publication Critical patent/JPS5615079A/en
Publication of JPS6148793B2 publication Critical patent/JPS6148793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the difference of threshold voltage of an insulated gate field effect transistors couple by a method wherein the material and the form of the gate electrodes corresponding with each other are made to be identical, and the path form of connecting conductors to the gates are made in the same. CONSTITUTION:Four unitary insulated gate field effect transistors (MISFET's) Q1-Q4 having a drain electrode 7 in common are formed on a p-type substrate 1. At two pairs of unitary MISFET's Q1 and Q4, Q2 and Q3, each source electrode 8 is connected with each other through conductors 11, 13 and each gate electrode is connected with each other through conductors 12, 14 to form two compound MISFET couples connected completely in parallel. The conductor 12 is prolonged to provide a conductor 12a at the neighborhood of a channel region 10 of the unitary MISFET Q1, and the conductor 11 is prolonged to provide conductors 11a, 11b to make the effect of those conductors to the unitary MISFET's to be equal.
JP9078679A 1979-07-16 1979-07-16 Insulated gate field effect transistor couple Granted JPS5615079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9078679A JPS5615079A (en) 1979-07-16 1979-07-16 Insulated gate field effect transistor couple

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9078679A JPS5615079A (en) 1979-07-16 1979-07-16 Insulated gate field effect transistor couple

Publications (2)

Publication Number Publication Date
JPS5615079A true JPS5615079A (en) 1981-02-13
JPS6148793B2 JPS6148793B2 (en) 1986-10-25

Family

ID=14008272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9078679A Granted JPS5615079A (en) 1979-07-16 1979-07-16 Insulated gate field effect transistor couple

Country Status (1)

Country Link
JP (1) JPS5615079A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04184797A (en) * 1990-11-19 1992-07-01 Mitsubishi Electric Corp Peak holding circuit
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
JPH0645530A (en) * 1984-01-23 1994-02-18 Internatl Rectifier Corp Bidirectional-continuity insulated-gate field-effect transistor
US5663587A (en) * 1987-06-01 1997-09-02 Mitsubishi Denki Kabushiki Kaisha Field effect transistor of high breakdown voltage type having stable electrical characteristics

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645530A (en) * 1984-01-23 1994-02-18 Internatl Rectifier Corp Bidirectional-continuity insulated-gate field-effect transistor
US5175604A (en) * 1985-11-15 1992-12-29 Kabushiki Kaisha Toshiba Field-effect transistor device
US5663587A (en) * 1987-06-01 1997-09-02 Mitsubishi Denki Kabushiki Kaisha Field effect transistor of high breakdown voltage type having stable electrical characteristics
JPH04184797A (en) * 1990-11-19 1992-07-01 Mitsubishi Electric Corp Peak holding circuit

Also Published As

Publication number Publication date
JPS6148793B2 (en) 1986-10-25

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