GB1390135A - Insulated gate semiconductor device - Google Patents

Insulated gate semiconductor device

Info

Publication number
GB1390135A
GB1390135A GB2077572A GB2077572A GB1390135A GB 1390135 A GB1390135 A GB 1390135A GB 2077572 A GB2077572 A GB 2077572A GB 2077572 A GB2077572 A GB 2077572A GB 1390135 A GB1390135 A GB 1390135A
Authority
GB
United Kingdom
Prior art keywords
regions
gap
type
insulated gate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2077572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1390135A publication Critical patent/GB1390135A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure

Abstract

1390135 Semi-conductor devices MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 4 May 1972 [8 May 1971] 20775/72 Heading H1K Regions 13 of N<+> (or P<+>) conductivity type are provided in a higher resistivity N(P)type substrate 7 at zones of maximum field intensity between two P(N)type regions 8, 9, the gap between the regions 8, 9 being covered by an insulated gate 12. The device shown is an insulated gate thyristor, and has an N<+> region 9<1> within the P type region 9, anode and cathode electrodes 10, 11 being situated on the regions 8, 9<1> respectively. In this case the N<+> regions 13 allow the resistivity of the substrate 7 to be increased, increasing the thyristor breakdown voltage. If the region 9<1> is omitted the device constitutes an MOS transistor, the regions 13 allowing channel length to be reduced without risk of punchthrough and also permitting substrate resistivity to be increased, resulting in a high frequency device having a low threshold voltage. The N<+> regions 13 may extend somewhat into the gap between the P type regions 8, 9 and may completely bridge the gap. Si, Ge, GaAs, GaP and InAs are referred to, B and P being dopants mentioned in connection with Si. Devices according to the invention may be light-sensitive.
GB2077572A 1971-05-08 1972-05-04 Insulated gate semiconductor device Expired GB1390135A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3063571 1971-05-08

Publications (1)

Publication Number Publication Date
GB1390135A true GB1390135A (en) 1975-04-09

Family

ID=12309285

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2077572A Expired GB1390135A (en) 1971-05-08 1972-05-04 Insulated gate semiconductor device

Country Status (6)

Country Link
AU (1) AU453010B2 (en)
CA (1) CA961172A (en)
DE (1) DE2221865A1 (en)
FR (1) FR2137592B1 (en)
GB (1) GB1390135A (en)
NL (1) NL7206103A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766094A (en) * 1986-03-21 1988-08-23 Hollinger Theodore G Semiconductor doping process
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US5231474A (en) * 1986-03-21 1993-07-27 Advanced Power Technology, Inc. Semiconductor device with doped electrical breakdown control region
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same
FR2428327A1 (en) * 1978-06-09 1980-01-04 Thomson Csf FIELD EFFECT TRANSISTOR CONSTITUTING A MEMORY POINT AND ITS MANUFACTURING METHOD
JPS56501509A (en) * 1979-11-14 1981-10-15
EP1003222A1 (en) * 1998-11-19 2000-05-24 STMicroelectronics S.r.l. Improved field-effect transistor and corresponding manufacturing method
US9099556B2 (en) * 2011-08-19 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Transistor having an active region with wing structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures
US4766094A (en) * 1986-03-21 1988-08-23 Hollinger Theodore G Semiconductor doping process
US5231474A (en) * 1986-03-21 1993-07-27 Advanced Power Technology, Inc. Semiconductor device with doped electrical breakdown control region
US5434095A (en) * 1986-03-21 1995-07-18 Sundstrand Corporation Method for controlling electrical breakdown in semiconductor power devices
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices

Also Published As

Publication number Publication date
NL7206103A (en) 1972-11-10
FR2137592B1 (en) 1979-02-09
AU453010B2 (en) 1974-09-19
DE2221865A1 (en) 1972-11-23
FR2137592A1 (en) 1972-12-29
AU4195572A (en) 1974-05-16
CA961172A (en) 1975-01-14

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee