GB1502122A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1502122A
GB1502122A GB33548/75A GB3354875A GB1502122A GB 1502122 A GB1502122 A GB 1502122A GB 33548/75 A GB33548/75 A GB 33548/75A GB 3354875 A GB3354875 A GB 3354875A GB 1502122 A GB1502122 A GB 1502122A
Authority
GB
United Kingdom
Prior art keywords
emitter
transistor
base
region
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33548/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1502122A publication Critical patent/GB1502122A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664—Vertical bipolar transistor in combination with diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1502122 Semi-conductor devices RCA CORPORATION 12 Aug 1975 [19 Aug 1974] 33548/75 Heading H1K A semi-conductor device, particularly a high power device in integrated form, comprising two transistors 14, 18 with their collector regions 26, 28 and 60, 62 respectively, electrically connected together, is characterized in that the transistor 18 has its common emitter current gain less than that of the conventional transistor by at least an order of magnitude, and in particular lying between 0À05 and 0À25, so that the transistor 18 functions as a diode 16 having its base and emitter regions 58, 56 and 54 respectively, virtually isolated from the collector electrode 40 of the transistor 14, the device being further characterized in that each transistor is provided with a first base region partly surrounding its emitter region, and a common second base region 58 of the same conductivity type as the first base region but of lower conductivity type and laterally surrounding the respective first base region. The low value of the common emitter current gain is obtained by (1) providing a shallow emitter region 54 of, e.g. depth 0À1 mil. as compared to 0À7 mil. depth of the emitter region 20, Fig. 1, or (2) by providing a base (86), Fig. 3 (not shown), of a transistor (88) with a deeper region than that of the P+ base (22<SP>1</SP>) of a transistor 141, the depths of the emitter regions (20<SP>1</SP>, 84<SP>1</SP>) being the same in both the transistors. The impurity distribution profiles in the embodiment of Fig. 1 in the base and collector regions of both the transistors are substantially identical along vertical lines that do not intersect the emitter regions, whereas in the embodiment of Fig. 3, impurity distribution profiles in the emitter and collector regions are substantially identical.
GB33548/75A 1974-08-19 1975-08-12 Semiconductor devices Expired GB1502122A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49877474A 1974-08-19 1974-08-19

Publications (1)

Publication Number Publication Date
GB1502122A true GB1502122A (en) 1978-02-22

Family

ID=23982440

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33548/75A Expired GB1502122A (en) 1974-08-19 1975-08-12 Semiconductor devices

Country Status (9)

Country Link
JP (1) JPS5145984A (en)
AU (1) AU8392475A (en)
BE (1) BE832491A (en)
DE (1) DE2535864A1 (en)
FR (1) FR2282721A1 (en)
GB (1) GB1502122A (en)
IN (1) IN141922B (en)
NL (1) NL7509804A (en)
SE (1) SE7509023L (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2427687A1 (en) * 1978-06-01 1979-12-28 Mitsubishi Electric Corp SEMICONDUCTOR DEVICES CONTAINING AT LEAST ONE POWER TRANSISTOR AND ONE SERIES OF TRANSISTORS FOR WEAK SIGNALS
US5481132A (en) * 1991-05-31 1996-01-02 Sgs-Thomson Microelectronics S.A. Transistor with a predetermined current gain in a bipolar integrated circuit
US6566217B1 (en) 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458146A1 (en) * 1979-05-29 1980-12-26 Thomson Csf INTEGRATED STRUCTURE COMPRISING A TRANSISTOR AND THREE ANTISATURATION DIODES
FR2458904A1 (en) * 1979-06-12 1981-01-02 Thomson Csf MONOLITHIC INTEGRATED CIRCUIT EQUIVALENT TO A TRANSISTOR ASSOCIATED WITH THREE ANTI-SATURATION DIODES
JPS62214660A (en) * 1986-03-17 1987-09-21 Toshiba Corp Semiconductor device
JPH0531725Y2 (en) * 1987-10-28 1993-08-16
EP0632502B1 (en) * 1993-06-28 1999-03-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Bipolar power transistor with high collector breakdown voltage and related manufacturing process
KR100256169B1 (en) * 1996-01-16 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 Semiconductor device and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2427687A1 (en) * 1978-06-01 1979-12-28 Mitsubishi Electric Corp SEMICONDUCTOR DEVICES CONTAINING AT LEAST ONE POWER TRANSISTOR AND ONE SERIES OF TRANSISTORS FOR WEAK SIGNALS
US5481132A (en) * 1991-05-31 1996-01-02 Sgs-Thomson Microelectronics S.A. Transistor with a predetermined current gain in a bipolar integrated circuit
US6566217B1 (en) 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device

Also Published As

Publication number Publication date
JPS5145984A (en) 1976-04-19
FR2282721A1 (en) 1976-03-19
DE2535864A1 (en) 1976-03-04
IN141922B (en) 1977-05-07
BE832491A (en) 1975-12-01
SE7509023L (en) 1976-02-20
NL7509804A (en) 1976-02-23
AU8392475A (en) 1977-02-17

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed