JPS554912A - Fieldeffect lateral transistor - Google Patents

Fieldeffect lateral transistor

Info

Publication number
JPS554912A
JPS554912A JP7646778A JP7646778A JPS554912A JP S554912 A JPS554912 A JP S554912A JP 7646778 A JP7646778 A JP 7646778A JP 7646778 A JP7646778 A JP 7646778A JP S554912 A JPS554912 A JP S554912A
Authority
JP
Japan
Prior art keywords
zone
gate
changing
depletion layer
fieldeffect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7646778A
Other languages
Japanese (ja)
Inventor
Hideki Takaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7646778A priority Critical patent/JPS554912A/en
Publication of JPS554912A publication Critical patent/JPS554912A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To mitigate field concentration by providing an auxiliary gate zone next to the drain side of a gate zone, thus changing a pattern of a depletion layer below the gate.
CONSTITUTION: After a P+ main gate zone 7 has been formed, impurities, overlapping a portion of this zone, are diffused; thus creating a relatively shallow P auxilliary zone 12 at the drain side of the zone 7. This sort of gate smoothens a depletion layer and softens field concentration without changing the length of an effective channel L. Therefore, usable voltage range can be expanded widely up to as high as the maximum voltage between a source and the drain without changing mutual conductance which depends on channel lingth.
COPYRIGHT: (C)1980,JPO&Japio
JP7646778A 1978-06-26 1978-06-26 Fieldeffect lateral transistor Pending JPS554912A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7646778A JPS554912A (en) 1978-06-26 1978-06-26 Fieldeffect lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7646778A JPS554912A (en) 1978-06-26 1978-06-26 Fieldeffect lateral transistor

Publications (1)

Publication Number Publication Date
JPS554912A true JPS554912A (en) 1980-01-14

Family

ID=13605963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7646778A Pending JPS554912A (en) 1978-06-26 1978-06-26 Fieldeffect lateral transistor

Country Status (1)

Country Link
JP (1) JPS554912A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584978A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Lateral junction type field-effect transistor
WO2010071084A1 (en) * 2008-12-16 2010-06-24 住友電気工業株式会社 Semiconductor device and manufacturing method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131881A (en) * 1978-04-03 1979-10-13 Nec Corp Junction-type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131881A (en) * 1978-04-03 1979-10-13 Nec Corp Junction-type field effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584978A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Lateral junction type field-effect transistor
WO2010071084A1 (en) * 2008-12-16 2010-06-24 住友電気工業株式会社 Semiconductor device and manufacturing method therefor
JP2010166024A (en) * 2008-12-16 2010-07-29 Sumitomo Electric Ind Ltd Semiconductor device, and method for manufacturing the same
US8643065B2 (en) 2008-12-16 2014-02-04 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same

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