JPS5642374A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5642374A
JPS5642374A JP11819579A JP11819579A JPS5642374A JP S5642374 A JPS5642374 A JP S5642374A JP 11819579 A JP11819579 A JP 11819579A JP 11819579 A JP11819579 A JP 11819579A JP S5642374 A JPS5642374 A JP S5642374A
Authority
JP
Japan
Prior art keywords
insulating film
impurity
diffused
gate insulating
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11819579A
Other languages
Japanese (ja)
Inventor
Tsuyoshi Tanahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11819579A priority Critical patent/JPS5642374A/en
Publication of JPS5642374A publication Critical patent/JPS5642374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an FET having arbitrary current vs. voltage characteristics by forming different impurity densities in a part of the surface of a channel region or partially varying the thickness of a gate insulating film, thereby producing a plurality of thresholds in the channel region. CONSTITUTION:A reverse conductivity type impurity is diffused in one conductivity type semiconductor substrate 6, and regions 4-1, 4-2 are formed, and a region 5 diffused with no impurity is formed in the substrate 6 therebetween. A thick field insulating film is formed on the surface of the substrate 6 at the outside of the retions, a thin gate insulating film 7 is covered on the regions 4-1, 4-2, and 5 surrounded thereby, and a gate electrode 3 is formed on the film 7 while extending it on the field insulating film. Or, the impurity density is formed the same as that of the diffused region, and the thickness of the gate insulating film 7 formed thereon is partly altered. Thus, there can be obtained the FET which has entirely new current vs. voltage characteristics.
JP11819579A 1979-09-14 1979-09-14 Field effect transistor Pending JPS5642374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11819579A JPS5642374A (en) 1979-09-14 1979-09-14 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11819579A JPS5642374A (en) 1979-09-14 1979-09-14 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5642374A true JPS5642374A (en) 1981-04-20

Family

ID=14730512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11819579A Pending JPS5642374A (en) 1979-09-14 1979-09-14 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5642374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04304668A (en) * 1991-04-02 1992-10-28 Nec Corp Semiconductor device
WO1998050959A1 (en) * 1997-05-06 1998-11-12 Siemens Aktiengesellschaft Semiconductor component

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144280A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Mis type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144280A (en) * 1976-05-27 1977-12-01 Fujitsu Ltd Mis type semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04304668A (en) * 1991-04-02 1992-10-28 Nec Corp Semiconductor device
WO1998050959A1 (en) * 1997-05-06 1998-11-12 Siemens Aktiengesellschaft Semiconductor component

Similar Documents

Publication Publication Date Title
JPS6451665A (en) Semiconductor device
JPS6439069A (en) Field-effect transistor
JPS5642374A (en) Field effect transistor
JPS55130171A (en) Mos field effect transistor
JPS57141965A (en) Insulated gate type field effect transistor
JPS5670662A (en) Insulated gate type field effect transistor
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS56126977A (en) Junction type field effect transistor
JPS5736863A (en) Manufacture of semiconductor device
JPS6467970A (en) Thin film transistor
JPS55120169A (en) Semiconductor device
JPS5723271A (en) Field effect transistor
DE69027312T2 (en) FIELD EFFECT TRANSISTOR WITH FERMI THRESHOLD VOLTAGE
JPS57141964A (en) Insulated gate type field effect transistor
JPS55108773A (en) Insulating gate type field effect transistor
JPS56126970A (en) Mos field effect transistor and manufacture thereof
JPS55151365A (en) Insulated gate type transistor and semiconductor integrated circuit
JPS55102274A (en) Insulated gate field effect transistor
JPS55102276A (en) Semiconductor device
JPS55160455A (en) Manufacture of insulated gate type field effect semiconductor device
JPS5683074A (en) Mos integrated circuit
JPS5713766A (en) Manufacture of insulated gate type field effect transistor
JPS564280A (en) Insulated gate type field effect transistor
JPS6417475A (en) Manufacture of mos semiconductor device
JPS56115572A (en) Field effect transistor